Infineon Technologies AG Bipolar Transistors - Pre-Biased BCR 555 E6327

Description
Bipolar Transistors - Pre-Biased PNP Silicon Digital TRANSISTOR
Description
Bipolar Transistors - Pre-Biased PNP Silicon Digital TRANSISTOR
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The BCR555 is a PNP silicon digital transistor with integrated bias resistors (R1 = 2.2 kΩ, R2 = 10 kΩ) designed for switching applications. It is housed in an SOT23 package and compliant with RoHS and AEC-Q101 standards. The device has a maximum collector-emitter voltage of 50 V, a collector current rating of 500 mA, and a total power dissipation of 330 mW at 79 °C. The junction temperature ranges from -65 °C to 150 °C. Electrical characteristics include a collector-emitter saturation voltage of up to 0.3 V and a transition frequency of 150 MHz. Pin configuration is 1=B, 2=E, 3=C.

Datasheet Summary
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The BCR555 is a PNP silicon digital transistor with integrated bias resistors (R1 = 2.2 kΩ, R2 = 10 kΩ) designed for switching applications. It is housed in an SOT23 package and compliant with RoHS and AEC-Q101 standards. The device has a maximum collector-emitter voltage of 50 V, a collector current rating of 500 mA, and a total power dissipation of 330 mW at 79 °C. The junction temperature ranges from -65 °C to 150 °C. Electrical characteristics include a collector-emitter saturation voltage of up to 0.3 V and a transition frequency of 150 MHz. Pin configuration is 1=B, 2=E, 3=C.

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Sheung Wan, Hong Kong
Bipolar Transistors - Pre-Biased
BCR 555 E6327
Bipolar Transistors - Pre-Biased BCR 555 E6327
Bipolar Transistors - Pre-Biased PNP Silicon Digital TRANSISTOR

Bipolar Transistors - Pre-Biased PNP Silicon Digital TRANSISTOR

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number BCR 555 E6327
Product Name Bipolar Transistors - Pre-Biased
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