Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 140MHz 200mW Surface Mount PG-SOT23
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 140MHz 200mW Surface Mount PG-SOT23
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 140MHz 200mW Surface Mount PG-SOT23
TRANS PREBIAS NPN 50V SOT23 Product overview: BCR112E6327HTSA1 from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, SOT23. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, SOT23, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-BCR112E6327HTSA1
Manufacturer: Infineon Technologies
Win Source Part Number: 103385-BCR112E6327HT
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 140MHz
Transistor Polarity: NPN - Pre-Biased
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): 4.7k
Categories: Discrete Semiconductor Products
Case / Package: SOT-23-3
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 300mV @ 500μA, 10mA
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 20 @ 5mA, 5V
Maximum Power Dissipation: 200mW
Popularity: Medium
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Balance
TRANS PREBIAS NPN 50V SOT23
TRANS PREBIAS NPN 0.2W SOT23-3
DIGITAL TRANS, 50V, 4.7K/4.7K, SOT-23-3; Transistor Polarity:-; Collector Emitter Voltage V(br)ceo:50V; Transition Frequency ft:-; Power Dissipation Pd:-; DC Collector Current:-; DC Current Gain hFE:-; Transistor Case Style:-; No. ofRoHS Compliant: Yes
| DigiKey | ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Shenzhen Shengyu Electronics Technology Limited | ODG (Origin Data Global) | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|
| Product Category | Transistors | Bipolar RF Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Transistors |
| Product Number | BCR112E6327HTSA1TR-ND | 292-BCR112E6327HTSA1 | 103385-BCR112E6327HTSA1 | BCR112E6327HTSA1 | BCR112E6327HTSA1 | 84Y9596 |
| Product Name | Single, Pre-Biased Bipolar Transistors | 50V SOT23 Bipolar Transistor | TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - BCR112E6327HTSA1 | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | Single, Pre-Biased Bipolar Transistors | Digital Trans, 50V, 4.7K/4.7K, Sot-23-3; Transistor Polarity Infineon |
| Polarity | NPN | NPN; NPN - Pre-Biased | NPN - Pre-Biased; NPN | |||
| Package Type | SOT23; TO-236-3, SC-59, SOT-23-3 | Tape & Reel (TR) | SOT3; SOT23; SOT-23-3 | SOT23; TO-236-3, SC-59, SOT-23-3 | TO-3; SOT23 | |
| Packing Method | Tape & Reel (TR) | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR | ||||
| IC(max) | 100000 milliamps | 100 milliamps | 100 milliamps | |||
| VCEO | 50 volts | 50 volts | 50 volts |
