Infineon Technologies AG TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - BCR112E6327HTSA1 BCR112E6327HTSA1

Description
Manufacturer: Infineon Technologies Win Source Part Number: 103385-BCR112E6327HT SA1 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 140MHz Transistor Polarity: NPN - Pre-Biased Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): 4.7k Categories: Discrete Semiconductor Products Case / Package: SOT-23-3 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 300mV @ 500μA, 10mA Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 20 @ 5mA, 5V Maximum Power Dissipation: 200mW Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Balance
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 103385-BCR112E6327HT SA1 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 140MHz Transistor Polarity: NPN - Pre-Biased Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): 4.7k Categories: Discrete Semiconductor Products Case / Package: SOT-23-3 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 300mV @ 500μA, 10mA Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 20 @ 5mA, 5V Maximum Power Dissipation: 200mW Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Balance
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Suppliers

Company
Product
Description
Supplier Links
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - BCR112E6327HTSA1 - 103385-BCR112E6327HTSA1 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - BCR112E6327HTSA1
103385-BCR112E6327HTSA1
TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - BCR112E6327HTSA1 103385-BCR112E6327HTSA1
Manufacturer: Infineon Technologies Win Source Part Number: 103385-BCR112E6327HT SA1 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 140MHz Transistor Polarity: NPN - Pre-Biased Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): 4.7k Categories: Discrete Semiconductor Products Case / Package: SOT-23-3 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 300mV @ 500μA, 10mA Collector Cut-off Current(Max): 100nA (ICBO) Typical Gain (hFE) (Min): 20 @ 5mA, 5V Maximum Power Dissipation: 200mW Popularity: Medium Fake Threat In the Open Market: 28 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 103385-BCR112E6327HTSA1
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 140MHz
Transistor Polarity: NPN - Pre-Biased
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): 4.7k
Categories: Discrete Semiconductor Products
Case / Package: SOT-23-3
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 300mV @ 500μA, 10mA
Collector Cut-off Current(Max): 100nA (ICBO)
Typical Gain (hFE) (Min): 20 @ 5mA, 5V
Maximum Power Dissipation: 200mW
Popularity: Medium
Fake Threat In the Open Market: 28 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Single, Pre-Biased Bipolar Transistors - BCR112E6327HTSA1TR-ND - DigiKey
Thief River Falls, MN, United States
Single, Pre-Biased Bipolar Transistors
BCR112E6327HTSA1TR-ND
Single, Pre-Biased Bipolar Transistors BCR112E6327HTSA1TR-ND
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 140MHz 200mW Surface Mount PG-SOT23

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 140MHz 200mW Surface Mount PG-SOT23

Buy Now Datasheet
Single, Pre-Biased Bipolar Transistors - BCR112E6327HTSA1CT-ND - DigiKey
Thief River Falls, MN, United States
Single, Pre-Biased Bipolar Transistors
BCR112E6327HTSA1CT-ND
Single, Pre-Biased Bipolar Transistors BCR112E6327HTSA1CT-ND
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 140MHz 200mW Surface Mount PG-SOT23

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 140MHz 200mW Surface Mount PG-SOT23

Buy Now Datasheet
Single, Pre-Biased Bipolar Transistors - BCR112E6327HTSA1DKR-ND - DigiKey
Thief River Falls, MN, United States
Single, Pre-Biased Bipolar Transistors
BCR112E6327HTSA1DKR-ND
Single, Pre-Biased Bipolar Transistors BCR112E6327HTSA1DKR-ND
Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 140MHz 200mW Surface Mount PG-SOT23

Pre-Biased Bipolar Transistor (BJT) NPN - Pre-Biased 50V 100mA 140MHz 200mW Surface Mount PG-SOT23

Buy Now Datasheet
Singapore, Singapore
50V SOT23 Bipolar Transistor
292-BCR112E6327HTSA1
50V SOT23 Bipolar Transistor 292-BCR112E6327HTSA1
TRANS PREBIAS NPN 50V SOT23 Product overview: BCR112E6327HTSA1 from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, SOT23. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, SOT23, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-BCR112E6327HTSA1 can be used for catalog matching and distributor lookup.

TRANS PREBIAS NPN 50V SOT23 Product overview: BCR112E6327HTSA1 from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V, SOT23. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, SOT23, Bipolar Transistor, Single, Pre-Biased Bipolar Transistors. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 292-BCR112E6327HTSA1 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Digital Trans, 50V, 4.7K/4.7K, Sot-23-3; Transistor Polarity Infineon - 84Y9596 - Newark, An Avnet Company
Chicago, IL, United States
Digital Trans, 50V, 4.7K/4.7K, Sot-23-3; Transistor Polarity Infineon
84Y9596
Digital Trans, 50V, 4.7K/4.7K, Sot-23-3; Transistor Polarity Infineon 84Y9596
DIGITAL TRANS, 50V, 4.7K/4.7K, SOT-23-3; Transistor Polarity:-; Collector Emitter Voltage V(br)ceo:50V; Transition Frequency ft:-; Power Dissipation Pd:-; DC Collector Current:-; DC Current Gain hFE:-; Transistor Case Style:-; No. ofRoHS Compliant: Yes

DIGITAL TRANS, 50V, 4.7K/4.7K, SOT-23-3; Transistor Polarity:-; Collector Emitter Voltage V(br)ceo:50V; Transition Frequency ft:-; Power Dissipation Pd:-; DC Collector Current:-; DC Current Gain hFE:-; Transistor Case Style:-; No. ofRoHS Compliant: Yes

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - BCR112E6327HTSA1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
BCR112E6327HTSA1
Discrete Semiconductor Products - Transistors - Bipolar (BJT) BCR112E6327HTSA1
TRANS PREBIAS NPN 50V SOT23

TRANS PREBIAS NPN 50V SOT23

Supplier's Site
Single, Pre-Biased Bipolar Transistors - BCR112E6327HTSA1 - ODG (Origin Data Global)
Shenzhen, China
Single, Pre-Biased Bipolar Transistors
BCR112E6327HTSA1
Single, Pre-Biased Bipolar Transistors BCR112E6327HTSA1
TRANS PREBIAS NPN 0.2W SOT23-3

TRANS PREBIAS NPN 0.2W SOT23-3

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics DigiKey ERSAELECTRONICS PTE. LTD. Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited ODG (Origin Data Global)
Product Category Transistors Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 103385-BCR112E6327HTSA1 BCR112E6327HTSA1TR-ND 292-BCR112E6327HTSA1 84Y9596 BCR112E6327HTSA1 BCR112E6327HTSA1
Product Name TRANSISTORS - Transistors (BJT) - Single, Pre - Biased - BCR112E6327HTSA1 Single, Pre-Biased Bipolar Transistors 50V SOT23 Bipolar Transistor Digital Trans, 50V, 4.7K/4.7K, Sot-23-3; Transistor Polarity Infineon Discrete Semiconductor Products - Transistors - Bipolar (BJT) Single, Pre-Biased Bipolar Transistors
Polarity NPN; NPN - Pre-Biased NPN NPN - Pre-Biased; NPN
Package Type SOT3; SOT23; SOT-23-3 SOT23; TO-236-3, SC-59, SOT-23-3 Tape & Reel (TR) TO-3; SOT23 SOT23; TO-236-3, SC-59, SOT-23-3
Packing Method Tape & Reel (TR) Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR
IC(max) 100000 milliamps 100 milliamps 100 milliamps
VCEO 50 volts 50 volts 50 volts
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