Infineon Technologies AG Bipolar Transistors - Pre-Biased BCR 133 E6433

Description
Bipolar Transistors - Pre-Biased NPN Silicon Digital TRANSISTOR
Description
Bipolar Transistors - Pre-Biased NPN Silicon Digital TRANSISTOR
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NPN silicon digital transistor with built-in bias resistors (R1 = R2 = 10 kΩ) for switching, inverter, interface, and drive circuits, housed in a SOT23 package. It has a collector-emitter voltage rating of 50 V, a collector current of 100 mA, and a total power dissipation of 200 mW at ambient temperatures up to 102°C. The device operates with a junction temperature up to 150°C and meets AEC-Q101 qualification standards. Input resistor ratio R1/R2 is specified between 0.9 and 1.1. Transition frequency is 130 MHz. The part is RoHS compliant.

Datasheet Summary
Powered by GS/AI

NPN silicon digital transistor with built-in bias resistors (R1 = R2 = 10 kΩ) for switching, inverter, interface, and drive circuits, housed in a SOT23 package. It has a collector-emitter voltage rating of 50 V, a collector current of 100 mA, and a total power dissipation of 200 mW at ambient temperatures up to 102°C. The device operates with a junction temperature up to 150°C and meets AEC-Q101 qualification standards. Input resistor ratio R1/R2 is specified between 0.9 and 1.1. Transition frequency is 130 MHz. The part is RoHS compliant.

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Sheung Wan, Hong Kong
Bipolar Transistors - Pre-Biased
BCR 133 E6433
Bipolar Transistors - Pre-Biased BCR 133 E6433
Bipolar Transistors - Pre-Biased NPN Silicon Digital TRANSISTOR

Bipolar Transistors - Pre-Biased NPN Silicon Digital TRANSISTOR

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number BCR 133 E6433
Product Name Bipolar Transistors - Pre-Biased
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