NPN silicon bipolar junction transistors for audio frequency input stages and driver applications, packaged in SOT23. The BCW60D variant features a collector-emitter voltage rating of 32 V, a collector current of 100 mA, and a maximum total power dissipation of 330 mW. The device has a high DC current gain (hFE) ranging from 100 to 460 at IC = 2 mA and VCE = 5 V. It exhibits low noise with a noise figure of up to 2 dB at 200 μA, and a transition frequency of 250 MHz. Qualified to AEC-Q101 and RoHS compliant.
Bipolar Transistors - BJT NPN Silicon AF TRANSISTOR
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | BCW 60D E6327 |
| Product Name | Bipolar Transistors - BJT |
