NPN silicon bipolar transistor for audio frequency input stages and driver applications, housed in an SOT23 package. It has a collector-emitter voltage rating of 32 V, collector-base voltage of 32 V, emitter-base voltage of 6 V, and a maximum collector current of 100 mA. The device supports a maximum power dissipation of 330 mW at a junction temperature of 150 °C. Current gain (hFE) ranges from 20 to 460 depending on grade, with a typical hFE of 250 at 2 mA collector current. It is RoHS compliant and qualified to AEC Q101 standards.
Bipolar Transistors - BJT NPN Silicon AF TRANSISTOR
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | BCW 60C E6327 |
| Product Name | Bipolar Transistors - BJT |
