Infineon Technologies AG 0.25W Bipolar Transistor BCR108SH6327XTSA1

Description
TRANS 2NPN PREBIAS 0.25W SOT363 Product overview: BCR108SH6327XTSA1 from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 0.25W. Search-friendly keywords include transistor, BJT, switching, amplification, 0.25W, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-BCR108SH6327XTSA 1 can be used for catalog matching and distributor lookup.
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Description
TRANS 2NPN PREBIAS 0.25W SOT363 Product overview: BCR108SH6327XTSA1 from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 0.25W. Search-friendly keywords include transistor, BJT, switching, amplification, 0.25W, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-BCR108SH6327XTSA 1 can be used for catalog matching and distributor lookup.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Singapore
0.25W Bipolar Transistor
293-BCR108SH6327XTSA1
0.25W Bipolar Transistor 293-BCR108SH6327XTSA1
TRANS 2NPN PREBIAS 0.25W SOT363 Product overview: BCR108SH6327XTSA1 from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 0.25W. Search-friendly keywords include transistor, BJT, switching, amplification, 0.25W, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-BCR108SH6327XTSA 1 can be used for catalog matching and distributor lookup.

TRANS 2NPN PREBIAS 0.25W SOT363 Product overview: BCR108SH6327XTSA1 from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 0.25W. Search-friendly keywords include transistor, BJT, switching, amplification, 0.25W, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-BCR108SH6327XTSA1 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Bipolar Transistor Arrays, Pre-Biased - BCR108SH6327XTSA1TR-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays, Pre-Biased
BCR108SH6327XTSA1TR-ND
Bipolar Transistor Arrays, Pre-Biased BCR108SH6327XTSA1TR-ND
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 170MHz 250mW Surface Mount PG-SOT363-6

Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 170MHz 250mW Surface Mount PG-SOT363-6

Buy Now Datasheet
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - BCR108SH6327XTSA1 - 097795-BCR108SH6327XTSA1 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - BCR108SH6327XTSA1
097795-BCR108SH6327XTSA1
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - BCR108SH6327XTSA1 097795-BCR108SH6327XTSA1
Manufacturer: Infineon Technologies Win Source Part Number: 097795-BCR108SH6327X TSA1 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 170MHz Transistor Polarity: 2 NPN - Pre-Biased (Dual) Resistor - Base (R1) (Ohms): 2.2k Resistor - Emitter Base (R2) (Ohms): 47k Categories: Discrete Semiconductor Products Case / Package: PG-SOT363-6 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 300mV @ 500μA, 10mA Typical Gain (hFE) (Min): 70 @ 5mA, 5V Maximum Power Dissipation: 250mW Popularity: Medium Fake Threat In the Open Market: 56 pct. Supply and Demand Status: Sufficient

Manufacturer: Infineon Technologies
Win Source Part Number: 097795-BCR108SH6327XTSA1
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 170MHz
Transistor Polarity: 2 NPN - Pre-Biased (Dual)
Resistor - Base (R1) (Ohms): 2.2k
Resistor - Emitter Base (R2) (Ohms): 47k
Categories: Discrete Semiconductor Products
Case / Package: PG-SOT363-6
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 300mV @ 500μA, 10mA
Typical Gain (hFE) (Min): 70 @ 5mA, 5V
Maximum Power Dissipation: 250mW
Popularity: Medium
Fake Threat In the Open Market: 56 pct.
Supply and Demand Status: Sufficient

Buy Now Datasheet
Bipolar Transistor Arrays, Pre-Biased - BCR108SH6327XTSA1 - ODG (Origin Data Global)
Shenzhen, China
Bipolar Transistor Arrays, Pre-Biased
BCR108SH6327XTSA1
Bipolar Transistor Arrays, Pre-Biased BCR108SH6327XTSA1
TRANS 2NPN PREBIAS 0.25W SOT363

TRANS 2NPN PREBIAS 0.25W SOT363

Supplier's Site Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - BCR108SH6327XTSA1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
BCR108SH6327XTSA1
Discrete Semiconductor Products - Transistors - Bipolar (BJT) BCR108SH6327XTSA1
TRANS 2NPN PREBIAS 0.25W SOT363

TRANS 2NPN PREBIAS 0.25W SOT363

Supplier's Site

Technical Specifications

  ERSAELECTRONICS PTE. LTD. DigiKey Win Source Electronics ODG (Origin Data Global) Shenzhen Shengyu Electronics Technology Limited
Product Category Bipolar RF Transistors Transistors Transistors Bipolar RF Transistors Bipolar RF Transistors
Product Number 293-BCR108SH6327XTSA1 BCR108SH6327XTSA1TR-ND 097795-BCR108SH6327XTSA1 BCR108SH6327XTSA1 BCR108SH6327XTSA1
Product Name 0.25W Bipolar Transistor Bipolar Transistor Arrays, Pre-Biased TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - BCR108SH6327XTSA1 Bipolar Transistor Arrays, Pre-Biased Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Package Type Tape & Reel (TR) 6-VSSOP, SC-88, SOT-363 SOT3; PG-SOT363-6 6-VSSOP, SC-88, SOT-363
Packing Method Tape & Reel (TR) Tape Reel; Tape & Reel (TR)
IC(max) 100000 milliamps 100 milliamps 100 milliamps
VCEO 50 volts 50 volts 50 volts
PD 250 milliwatts
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