Infineon Technologies AG Single, Pre-Biased Bipolar Transistors BCR158E6327

BCR158 is a PNP silicon digital transistor with built-in bias resistors (R1 = 2.2 kΩ, R2 = 47 kΩ) for use in switching, inverter, interface, and driver circuits. It is available in SOT23, TSFP-3, and SOT323 packages. The device has a collector-emitter voltage rating of 50 V, a maximum collector current of 100 mA, and a total power dissipation of 200 mW (SOT23), 250 mW (TSFP-3 and SOT323). The junction temperature rating is 150 °C. It is RoHS compliant and qualified to AEC-Q101. The DC current gain (hFE) is a minimum of 70 at IC = 5 mA and VCE = 5 V, with a collector-emitter saturation voltage of ≤ 0.3 V at IC = 10 mA and IB = 0.5 mA. The transition frequency is 200 MHz, and the input off voltage ranges from 0.4 V to 0.8 V. Input on voltage ranges from 0.5 V to 1.1 V.