TRANS PREBIAS 2NPN 50V SOT363-6 Product overview: BCR133SH6327XTSA1 from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 50V. Search-friendly keywords include transistor, BJT, switching, amplification, 50V, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-BCR133SH6327XTSA
Manufacturer: Infineon Technologies
Win Source Part Number: 102670-BCR133SH6327X
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 130MHz
Transistor Polarity: 2 NPN - Pre-Biased (Dual)
Resistor - Base (R1) (Ohms): 10k
Resistor - Emitter Base (R2) (Ohms): 10k
Categories: Discrete Semiconductor Products
Case / Package: PG-SOT363-6
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 300mV @ 500μA, 10mA
Typical Gain (hFE) (Min): 30 @ 5mA, 5V
Maximum Power Dissipation: 250mW
Popularity: Medium
Fake Threat In the Open Market: 52 pct.
Supply and Demand Status: Balance
Application Field: Used in Industrial, Power Management
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 130MHz 250mW Surface Mount PG-SOT363-6
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 130MHz 250mW Surface Mount PG-SOT363-6
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 130MHz 250mW Surface Mount PG-SOT363-6
BRT TRANS, 1K/10KOHM, SOT-363; Collector Emitter Voltage V(br)ceo:50V; Continuous Collector Current Ic:100mA; Base Input Resistor R1:1kohm; Base-Emitter Resistor R2:10kohm; Resistor Ratio, R1 / R2:1(Ratio); RF Transistor RoHS Compliant: Yes
TRANS PREBIAS 2NPN 50V SOT363-6
TRANS PREBIAS 2NPN 50V SOT363-6
Bipolar Transistors - Pre-Biased AF DIGITAL TRANSISTOR
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | DigiKey | Newark, An Avnet Company | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | VAST STOCK CO., LIMITED | |
|---|---|---|---|---|---|---|---|
| Product Category | Bipolar RF Transistors | Transistors | Transistors | Transistors | Bipolar RF Transistors | Bipolar RF Transistors | Bipolar RF Transistors |
| Product Number | 293-BCR133SH6327XTSA1 | 102670-BCR133SH6327XTSA1 | BCR133SH6327XTSA1CT-ND | 03AJ0026 | BCR133SH6327XTSA1 | BCR133SH6327XTSA1 | BCR133SH6327XTSA1 |
| Product Name | 50V Bipolar Transistor | TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - BCR133SH6327XTSA1 | Bipolar Transistor Arrays, Pre-Biased | Brt Trans, 1K/10Kohm, Sot-363; Collector Emitter Voltage V(Br)Ceo Infineon | Bipolar Transistor Arrays, Pre-Biased | Discrete Semiconductor Products - Transistors - Bipolar (BJT) | Bipolar Transistors - Pre-Biased |
| Package Type | Tape & Reel (TR) | SOT3; PG-SOT363-6 | 6-VSSOP, SC-88, SOT-363 | TO-3; SOT3 | 6-VSSOP, SC-88, SOT-363 | ||
| Packing Method | Tape & Reel (TR) | Tape Reel; Tape & Reel (TR),Cut Tape (CT),Digi-ReelR | |||||
| IC(max) | 100000 milliamps | 100 milliamps | 100 milliamps | ||||
| VCEO | 50 volts | 50 volts | 50 volts | ||||
| PD | 250 milliwatts |
