Infineon Technologies AG TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - BCR116 BCR116

Description
Manufacturer: Infineon Technologies Win Source Part Number: 233816-BCR116 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 150MHz Transistor Polarity: 2 NPN - Pre-Biased (Dual) Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): 47k Categories: Discrete Semiconductor Products Case / Package: PG-SOT363-6 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 300mV @ 500μA, 10mA Typical Gain (hFE) (Min): 70 @ 5mA, 5V Maximum Power Dissipation: 250mW Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Balance Application Field: Used in Industrial
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Description
Manufacturer: Infineon Technologies Win Source Part Number: 233816-BCR116 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 150MHz Transistor Polarity: 2 NPN - Pre-Biased (Dual) Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): 47k Categories: Discrete Semiconductor Products Case / Package: PG-SOT363-6 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 300mV @ 500μA, 10mA Typical Gain (hFE) (Min): 70 @ 5mA, 5V Maximum Power Dissipation: 250mW Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Balance Application Field: Used in Industrial
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TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - BCR116 - 233816-BCR116 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - BCR116
233816-BCR116
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - BCR116 233816-BCR116
Manufacturer: Infineon Technologies Win Source Part Number: 233816-BCR116 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 150MHz Transistor Polarity: 2 NPN - Pre-Biased (Dual) Resistor - Base (R1) (Ohms): 4.7k Resistor - Emitter Base (R2) (Ohms): 47k Categories: Discrete Semiconductor Products Case / Package: PG-SOT363-6 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 300mV @ 500μA, 10mA Typical Gain (hFE) (Min): 70 @ 5mA, 5V Maximum Power Dissipation: 250mW Popularity: Medium Fake Threat In the Open Market: 68 pct. Supply and Demand Status: Balance Application Field: Used in Industrial

Manufacturer: Infineon Technologies
Win Source Part Number: 233816-BCR116
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 150MHz
Transistor Polarity: 2 NPN - Pre-Biased (Dual)
Resistor - Base (R1) (Ohms): 4.7k
Resistor - Emitter Base (R2) (Ohms): 47k
Categories: Discrete Semiconductor Products
Case / Package: PG-SOT363-6
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 300mV @ 500μA, 10mA
Typical Gain (hFE) (Min): 70 @ 5mA, 5V
Maximum Power Dissipation: 250mW
Popularity: Medium
Fake Threat In the Open Market: 68 pct.
Supply and Demand Status: Balance
Application Field: Used in Industrial

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Technical Specifications

  Win Source Electronics
Product Category Transistors
Product Number 233816-BCR116
Product Name TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - BCR116
Polarity NPN; 2 NPN - Pre-Biased (Dual)
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