PNP silicon AF transistors for input stages and driver applications, packaged in SOT23 with a 2.9 mm x 1.3 mm footprint, rated for a maximum collector-emitter voltage of 32 V, collector current of 100 mA, and power dissipation of 330 mW. Features a minimum DC current gain of 40 and maximum of 300 at 10 µA collector current and 5 V collector-emitter voltage, increasing to 250 to 460 at 2 mA. Complies with AEC Q101 and is RoHS compliant.
Bipolar Transistors - BJT PNP Silicon AF TRANSISTOR
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | BCW 61C E6327 |
| Product Name | Bipolar Transistors - BJT |
