Infineon Technologies AG Bipolar Transistors - Pre-Biased BCR 521 E6327

Description
Bipolar Transistors - Pre-Biased NPN Silicon Digital TRANSISTOR
Description
Bipolar Transistors - Pre-Biased NPN Silicon Digital TRANSISTOR
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BCR521 is an NPN silicon digital transistor with integrated bias resistors (R1 and R2 each 1 kΩ) for simplified circuit design. It is packaged in SOT23 and rated for a collector-emitter voltage of 50 V, collector current of 500 mA, and total power dissipation of 330 mW at 79 °C. The junction temperature ranges from -65 °C to 150 °C, with thermal resistance from junction to soldering point of ≤215 K/W. It meets AEC-Q101 qualification and is RoHS compliant. Electrical characteristics include a collector-emitter saturation voltage of ≤0.3 V at I_C = 50 mA and I_B = 2.5 mA, and a transition frequency of 100 MHz.

Datasheet Summary
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BCR521 is an NPN silicon digital transistor with integrated bias resistors (R1 and R2 each 1 kΩ) for simplified circuit design. It is packaged in SOT23 and rated for a collector-emitter voltage of 50 V, collector current of 500 mA, and total power dissipation of 330 mW at 79 °C. The junction temperature ranges from -65 °C to 150 °C, with thermal resistance from junction to soldering point of ≤215 K/W. It meets AEC-Q101 qualification and is RoHS compliant. Electrical characteristics include a collector-emitter saturation voltage of ≤0.3 V at I_C = 50 mA and I_B = 2.5 mA, and a transition frequency of 100 MHz.

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Sheung Wan, Hong Kong
Bipolar Transistors - Pre-Biased
BCR 521 E6327
Bipolar Transistors - Pre-Biased BCR 521 E6327
Bipolar Transistors - Pre-Biased NPN Silicon Digital TRANSISTOR

Bipolar Transistors - Pre-Biased NPN Silicon Digital TRANSISTOR

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number BCR 521 E6327
Product Name Bipolar Transistors - Pre-Biased
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