Infineon Technologies AG Bipolar Transistors - Pre-Biased BCR 555 E6433

Description
Bipolar Transistors - Pre-Biased PNP Silicon Digital TRANSISTOR
Description
Bipolar Transistors - Pre-Biased PNP Silicon Digital TRANSISTOR
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PNP silicon digital transistor with built-in bias resistors (R1 = 2.2 kΩ, R2 = 10 kΩ) in SOT23 package, rated for a collector-emitter voltage of 50 V, collector current of 500 mA, and total power dissipation of 330 mW at 79 °C, with a junction temperature range of -65 °C to 150 °C and thermal resistance of ≤215 K/W. The device meets AEC-Q101 qualifications and is RoHS compliant.

Datasheet Summary
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PNP silicon digital transistor with built-in bias resistors (R1 = 2.2 kΩ, R2 = 10 kΩ) in SOT23 package, rated for a collector-emitter voltage of 50 V, collector current of 500 mA, and total power dissipation of 330 mW at 79 °C, with a junction temperature range of -65 °C to 150 °C and thermal resistance of ≤215 K/W. The device meets AEC-Q101 qualifications and is RoHS compliant.

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Sheung Wan, Hong Kong
Bipolar Transistors - Pre-Biased
BCR 555 E6433
Bipolar Transistors - Pre-Biased BCR 555 E6433
Bipolar Transistors - Pre-Biased PNP Silicon Digital TRANSISTOR

Bipolar Transistors - Pre-Biased PNP Silicon Digital TRANSISTOR

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number BCR 555 E6433
Product Name Bipolar Transistors - Pre-Biased
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