BCV61B is an NPN silicon double transistor in a SOT143 package, designed for current mirror applications with matched electrical characteristics and good thermal coupling. It has a collector-emitter voltage rating of 30 V, a continuous collector current of 100 mA, and a total power dissipation of 300 mW at 99 °C. The device features a minimum DC current gain of 200 at I_C = 2 mA and V_CE = 5 V, with a collector-emitter saturation voltage of up to 250 mV at I_C = 10 mA and I_B = 0.5 mA. It meets AEC-Q101 qualification and is RoHS compliant. The transition frequency is 250 MHz, and the junction temperature ranges from -65 °C to 150 °C.
Bipolar Transistors - BJT NPN Silicon Double TRANSISTOR
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | BCV 61B E6327 |
| Product Name | Bipolar Transistors - BJT |
