Infineon Technologies AG Bipolar Transistors - BJT BCV 62B E6327

Description
Bipolar Transistors - BJT AF TRANS GP BJT PNP 30V 0.1A
Description
Bipolar Transistors - BJT AF TRANS GP BJT PNP 30V 0.1A
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BCV62B is a PNP silicon double transistor in an SOT143 package, designed for current mirror applications with matched characteristics between transistors. It has a collector-emitter voltage rating of 30 V, a DC collector current of 100 mA, and a total power dissipation of 300 mW at 99 °C. The transistor exhibits a DC current gain (hFE) ranging from 220 to 475 at 2 mA collector current and 5 V collector-emitter voltage. Collector-emitter saturation voltage is specified at up to 650 mV at 100 mA collector current and 5 mA base current. The device is Pb-free and RoHS compliant, qualified to AEC-Q101, and features thermal coupling between transistors with matched current ratios from 0.7 to 1.3 at both 25 °C and 150 °C.

Datasheet Summary
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BCV62B is a PNP silicon double transistor in an SOT143 package, designed for current mirror applications with matched characteristics between transistors. It has a collector-emitter voltage rating of 30 V, a DC collector current of 100 mA, and a total power dissipation of 300 mW at 99 °C. The transistor exhibits a DC current gain (hFE) ranging from 220 to 475 at 2 mA collector current and 5 V collector-emitter voltage. Collector-emitter saturation voltage is specified at up to 650 mV at 100 mA collector current and 5 mA base current. The device is Pb-free and RoHS compliant, qualified to AEC-Q101, and features thermal coupling between transistors with matched current ratios from 0.7 to 1.3 at both 25 °C and 150 °C.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
BCV 62B E6327
Bipolar Transistors - BJT BCV 62B E6327
Bipolar Transistors - BJT AF TRANS GP BJT PNP 30V 0.1A

Bipolar Transistors - BJT AF TRANS GP BJT PNP 30V 0.1A

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number BCV 62B E6327
Product Name Bipolar Transistors - BJT
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