BCV62C is a PNP silicon double transistor for current mirror applications, packaged in SOT143. It has a maximum collector-emitter voltage of 30 V and a continuous collector current of 100 mA, with a power dissipation of 300 mW and a junction temperature limit of 150 °C. It meets AEC-Q101 qualification. The DC current gain ranges from 420 to 800 at 2 mA collector current and 5 V collector-emitter voltage. Collector-emitter saturation voltage is up to 650 mV at 100 mA collector and 5 mA base current. Base-emitter voltage at 2 mA is 600 to 750 mV. Current matching between transistors is 0.7 to 1.3 at 0.5 mA. Transition frequency is 250 MHz. Collector-base capacitance is 1.5 pF at 10 V.
Bipolar Transistors - BJT PNP 30 V 100 mA
| VAST STOCK CO., LIMITED | |
|---|---|
| Product Category | Bipolar RF Transistors |
| Product Number | BCV 62C E6327 |
| Product Name | Bipolar Transistors - BJT |
