Infineon Technologies AG Bipolar Transistors - Pre-Biased BCR 129 E6327

Description
Bipolar Transistors - Pre-Biased NPN Silicon Digital TRANSISTOR
Description
Bipolar Transistors - Pre-Biased NPN Silicon Digital TRANSISTOR
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NPN silicon digital transistor with built-in 10 kΩ bias resistor for switching and interface applications, available in SOT23, SOT323, and SOT363 packages; rated for 50 V collector-emitter voltage, 100 mA collector current, and 200 mW to 250 mW total power dissipation depending on package, with junction temperature up to 150 °C, qualified to AEC-Q101 and RoHS compliant.

Datasheet Summary
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NPN silicon digital transistor with built-in 10 kΩ bias resistor for switching and interface applications, available in SOT23, SOT323, and SOT363 packages; rated for 50 V collector-emitter voltage, 100 mA collector current, and 200 mW to 250 mW total power dissipation depending on package, with junction temperature up to 150 °C, qualified to AEC-Q101 and RoHS compliant.

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Sheung Wan, Hong Kong
Bipolar Transistors - Pre-Biased
BCR 129 E6327
Bipolar Transistors - Pre-Biased BCR 129 E6327
Bipolar Transistors - Pre-Biased NPN Silicon Digital TRANSISTOR

Bipolar Transistors - Pre-Biased NPN Silicon Digital TRANSISTOR

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number BCR 129 E6327
Product Name Bipolar Transistors - Pre-Biased
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