Infineon Technologies AG Bipolar Transistor Arrays, Pre-Biased BCR141SE6327BTSA1

Description
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 130MHz 250mW Surface Mount PG-SOT363-6
Request a Quote Datasheet
Description
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 130MHz 250mW Surface Mount PG-SOT363-6
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Bipolar Transistor Arrays, Pre-Biased - BCR141SE6327BTSA1TR-NDTR-ND - DigiKey
Thief River Falls, MN, United States
Bipolar Transistor Arrays, Pre-Biased
BCR141SE6327BTSA1TR-NDTR-ND
Bipolar Transistor Arrays, Pre-Biased BCR141SE6327BTSA1TR-NDTR-ND
Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 130MHz 250mW Surface Mount PG-SOT363-6

Pre-Biased Bipolar Transistor (BJT) 2 NPN - Pre-Biased (Dual) 50V 100mA 130MHz 250mW Surface Mount PG-SOT363-6

Buy Now Datasheet
Singapore
0.25W Bipolar Transistor
293-BCR141SE6327BTSA1
0.25W Bipolar Transistor 293-BCR141SE6327BTSA1
TRANS 2NPN PREBIAS 0.25W SOT363 Product overview: BCR141SE6327BTSA1 from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 0.25W. Search-friendly keywords include transistor, BJT, switching, amplification, 0.25W, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-BCR141SE6327BTSA 1 can be used for catalog matching and distributor lookup.

TRANS 2NPN PREBIAS 0.25W SOT363 Product overview: BCR141SE6327BTSA1 from Infineon Technologies is a Bipolar Transistor for signal amplification, switching, driver stages, discrete power control, and general electronic circuit design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 0.25W. Search-friendly keywords include transistor, BJT, switching, amplification, 0.25W, Bipolar Transistor, Bipolar Transistor Arrays, Pre-Biased. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 293-BCR141SE6327BTSA1 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - BCR141SE6327BTSA1 - 1022692-BCR141SE6327BTSA1 - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - BCR141SE6327BTSA1
1022692-BCR141SE6327BTSA1
TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - BCR141SE6327BTSA1 1022692-BCR141SE6327BTSA1
Manufacturer: Infineon Technologies Win Source Part Number: 1022692-BCR141SE6327 BTSA1 Packaging: Reel - TR Mounting: SMD (SMT) Frequency - Transition: 130MHz Transistor Polarity: 2 NPN - Pre-Biased (Dual) Resistor - Base (R1) (Ohms): 22k Resistor - Emitter Base (R2) (Ohms): 22k Categories: Discrete Semiconductor Products Status: Obsolete(EOL) Case / Package: PG-SOT363-6 Maximum Current Collector: 100mA VCEO Maximum Collector-Emitter Breakdown Voltage: 50V Max Vce (sat): 300mV @ 500μA, 10mA Typical Gain (hFE) (Min): 50 @ 5mA, 5V Maximum Power Dissipation: 250mW Popularity: Medium Fake Threat In the Open Market: 51 pct. Supply and Demand Status: Balance

Manufacturer: Infineon Technologies
Win Source Part Number: 1022692-BCR141SE6327BTSA1
Packaging: Reel - TR
Mounting: SMD (SMT)
Frequency - Transition: 130MHz
Transistor Polarity: 2 NPN - Pre-Biased (Dual)
Resistor - Base (R1) (Ohms): 22k
Resistor - Emitter Base (R2) (Ohms): 22k
Categories: Discrete Semiconductor Products
Status: Obsolete(EOL)
Case / Package: PG-SOT363-6
Maximum Current Collector: 100mA
VCEO Maximum Collector-Emitter Breakdown Voltage: 50V
Max Vce (sat): 300mV @ 500μA, 10mA
Typical Gain (hFE) (Min): 50 @ 5mA, 5V
Maximum Power Dissipation: 250mW
Popularity: Medium
Fake Threat In the Open Market: 51 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - Bipolar (BJT) - BCR141SE6327BTSA1 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - Bipolar (BJT)
BCR141SE6327BTSA1
Discrete Semiconductor Products - Transistors - Bipolar (BJT) BCR141SE6327BTSA1
TRANS 2NPN PREBIAS 0.25W SOT363

TRANS 2NPN PREBIAS 0.25W SOT363

Supplier's Site

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Bipolar RF Transistors Transistors Bipolar RF Transistors
Product Number BCR141SE6327BTSA1TR-NDTR-ND 293-BCR141SE6327BTSA1 1022692-BCR141SE6327BTSA1 BCR141SE6327BTSA1
Product Name Bipolar Transistor Arrays, Pre-Biased 0.25W Bipolar Transistor TRANSISTORS - Transistors (BJT) - Arrays, Pre - Biased - BCR141SE6327BTSA1 Discrete Semiconductor Products - Transistors - Bipolar (BJT)
Polarity NPN NPN; 2 NPN - Pre-Biased (Dual)
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