Infineon Technologies AG Bipolar Transistors - BJT BCV 62A E6327

Description
Bipolar Transistors - BJT AF TRANS GP BJT PNP 30V 0.1A
Description
Bipolar Transistors - BJT AF TRANS GP BJT PNP 30V 0.1A
Datasheet
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BCV62A is a PNP silicon double transistor in a SOT143 package, designed for current mirror applications with matched thermal coupling and voltage characteristics. It has a collector-emitter voltage rating of 30 V, a maximum DC collector current of 100 mA, and a total power dissipation of 300 mW at 99 °C. The device features a minimum DC current gain of 125 at I_C = 2 mA and V_CE = 5 V, with a collector-emitter saturation voltage of up to 650 mV at I_C = 100 mA and I_B = 5 mA. It is RoHS compliant and qualified to AEC-Q101 standards. The junction temperature ranges from -65 °C to 150 °C, with a thermal resistance from junction to soldering point of ≤170 K/W. The package has four pins with pinout: C2, C1, E1, E2.

Datasheet Summary
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BCV62A is a PNP silicon double transistor in a SOT143 package, designed for current mirror applications with matched thermal coupling and voltage characteristics. It has a collector-emitter voltage rating of 30 V, a maximum DC collector current of 100 mA, and a total power dissipation of 300 mW at 99 °C. The device features a minimum DC current gain of 125 at I_C = 2 mA and V_CE = 5 V, with a collector-emitter saturation voltage of up to 650 mV at I_C = 100 mA and I_B = 5 mA. It is RoHS compliant and qualified to AEC-Q101 standards. The junction temperature ranges from -65 °C to 150 °C, with a thermal resistance from junction to soldering point of ≤170 K/W. The package has four pins with pinout: C2, C1, E1, E2.

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Sheung Wan, Hong Kong
Bipolar Transistors - BJT
BCV 62A E6327
Bipolar Transistors - BJT BCV 62A E6327
Bipolar Transistors - BJT AF TRANS GP BJT PNP 30V 0.1A

Bipolar Transistors - BJT AF TRANS GP BJT PNP 30V 0.1A

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Technical Specifications

  VAST STOCK CO., LIMITED
Product Category Bipolar RF Transistors
Product Number BCV 62A E6327
Product Name Bipolar Transistors - BJT
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