Wolfspeed Silicon Carbide MOSFET Modules WAS530M12BM3T

Description
1200 V, 530 A, Silicon Carbide, Half-Bridge Module Technical Features Industry Standard 62mm Footprint High Humidity Operation THB-80 (HV-H3TRB) Ultra Low Loss, High-Frequency Operation Zero Reverse Recovery from Diodes Zero Turn-off Tail Current from MOSFET Normally-off, Fail-safe Device Operation Copper Baseplate and Aluminum Nitride Insulator Applications Induction Heating Motor Drives Renewables Railway Auxiliary and Traction EV Fast Charging UPS and SMPS System Benefits 62mm Form Factor Enables System Retrofit Increased System Efficiency, due to Low Switching and Conduction Losses of SiC
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Description
1200 V, 530 A, Silicon Carbide, Half-Bridge Module Technical Features Industry Standard 62mm Footprint High Humidity Operation THB-80 (HV-H3TRB) Ultra Low Loss, High-Frequency Operation Zero Reverse Recovery from Diodes Zero Turn-off Tail Current from MOSFET Normally-off, Fail-safe Device Operation Copper Baseplate and Aluminum Nitride Insulator Applications Induction Heating Motor Drives Renewables Railway Auxiliary and Traction EV Fast Charging UPS and SMPS System Benefits 62mm Form Factor Enables System Retrofit Increased System Efficiency, due to Low Switching and Conduction Losses of SiC
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Silicon Carbide MOSFET Modules - WAS530M12BM3T - Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide MOSFET Modules
WAS530M12BM3T
Silicon Carbide MOSFET Modules WAS530M12BM3T
1200 V, 530 A, Silicon Carbide, Half-Bridge Module Technical Features Industry Standard 62mm Footprint High Humidity Operation THB-80 (HV-H3TRB) Ultra Low Loss, High-Frequency Operation Zero Reverse Recovery from Diodes Zero Turn-off Tail Current from MOSFET Normally-off, Fail-safe Device Operation Copper Baseplate and Aluminum Nitride Insulator Applications Induction Heating Motor Drives Renewables Railway Auxiliary and Traction EV Fast Charging UPS and SMPS System Benefits 62mm Form Factor Enables System Retrofit Increased System Efficiency, due to Low Switching and Conduction Losses of SiC

1200 V, 530 A, Silicon Carbide, Half-Bridge Module

Technical Features

  • Industry Standard 62mm Footprint
  • High Humidity Operation THB-80 (HV-H3TRB)
  • Ultra Low Loss, High-Frequency Operation
  • Zero Reverse Recovery from Diodes
  • Zero Turn-off Tail Current from MOSFET
  • Normally-off, Fail-safe Device Operation
  • Copper Baseplate and Aluminum Nitride Insulator

Applications

  • Induction Heating
  • Motor Drives
  • Renewables
  • Railway Auxiliary and Traction
  • EV Fast Charging
  • UPS and SMPS

System Benefits

  • 62mm Form Factor Enables System Retrofit
  • Increased System Efficiency, due to Low Switching and Conduction Losses of SiC
Supplier's Site Datasheet
FET, MOSFET Arrays - 1697-WAS530M12BM3T-ND - DigiKey
Thief River Falls, MN, United States
FET, MOSFET Arrays
1697-WAS530M12BM3T-ND
FET, MOSFET Arrays 1697-WAS530M12BM3T-ND
SIC, MODULE, 530A, 1200V, 62MM,

SIC, MODULE, 530A, 1200V, 62MM,

Buy Now Datasheet

Technical Specifications

  Richardson RFPD DigiKey
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors
Product Number WAS530M12BM3T 1697-WAS530M12BM3T-ND
Product Name Silicon Carbide MOSFET Modules FET, MOSFET Arrays
Package Type 62mm Module
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