Microchip Technology, Inc. Silicon Carbide Diode Module MSCDC200H120AG

Description
Features Silicon carbide (SiC) Schottky diode Zero reverse recovery Zero forward recovery Temperature-independ ent switching behavior Positive temperature coefficient on VF High blocking voltage Low stray inductance M5 power connectors Aluminum Nitride (AlN) substrate for improved thermal performance Benefits Outstanding performance at high-frequency operation Low losses Direct mounting to heatsink (isolated package) Low junction-to-case thermal resistance RoHS compliant Applications Uninterruptible Power Supply (UPS) Induction heating Welding equipment High-speed rectifiers
Request a Quote Datasheet
Description
Features Silicon carbide (SiC) Schottky diode Zero reverse recovery Zero forward recovery Temperature-independ ent switching behavior Positive temperature coefficient on VF High blocking voltage Low stray inductance M5 power connectors Aluminum Nitride (AlN) substrate for improved thermal performance Benefits Outstanding performance at high-frequency operation Low losses Direct mounting to heatsink (isolated package) Low junction-to-case thermal resistance RoHS compliant Applications Uninterruptible Power Supply (UPS) Induction heating Welding equipment High-speed rectifiers
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Downers Grove, IL, United States
Silicon Carbide Diode Module
MSCDC200H120AG
Silicon Carbide Diode Module MSCDC200H120AG
Features Silicon carbide (SiC) Schottky diode Zero reverse recovery Zero forward recovery Temperature-independ ent switching behavior Positive temperature coefficient on VF High blocking voltage Low stray inductance M5 power connectors Aluminum Nitride (AlN) substrate for improved thermal performance Benefits Outstanding performance at high-frequency operation Low losses Direct mounting to heatsink (isolated package) Low junction-to-case thermal resistance RoHS compliant Applications Uninterruptible Power Supply (UPS) Induction heating Welding equipment High-speed rectifiers

Features

  • Silicon carbide (SiC) Schottky diode
  • Zero reverse recovery
  • Zero forward recovery
  • Temperature-independent switching behavior
  • Positive temperature coefficient on VF
  • High blocking voltage
  • Low stray inductance
  • M5 power connectors
  • Aluminum Nitride (AlN) substrate for improved thermal performance

Benefits

  • Outstanding performance at high-frequency operation
  • Low losses
  • Direct mounting to heatsink (isolated package)
  • Low junction-to-case thermal resistance
  • RoHS compliant

Applications

  • Uninterruptible Power Supply (UPS)
  • Induction heating
  • Welding equipment
  • High-speed rectifiers
Supplier's Site Datasheet
Discrete Semiconductor Products - Diodes - Bridge Rectifiers - MSCDC200H120AG - Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Diodes - Bridge Rectifiers
MSCDC200H120AG
Discrete Semiconductor Products - Diodes - Bridge Rectifiers MSCDC200H120AG
PM-DIODE-SIC-SBD-SP6 C

PM-DIODE-SIC-SBD-SP6C

Supplier's Site

Technical Specifications

  Richardson RFPD Acme Chip Technology Co., Limited
Product Category Diodes Rectifiers
Product Number MSCDC200H120AG MSCDC200H120AG
Product Name Silicon Carbide Diode Module Discrete Semiconductor Products - Diodes - Bridge Rectifiers
RoHS Compliant RoHS
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