Features
Silicon carbide (SiC) Schottky diode
Zero reverse recovery
Zero forward recovery
Temperature-independ
ent switching behavior
Positive temperature coefficient on VF
High blocking voltage
Very low stray inductance
Aluminum Nitride (AlN) substrate for improved thermal performance
Benefits
Outstanding performance at high-frequency operation
Solderable terminals for easy PCB mounting
Direct mounting to heatsink (isolated package)
Low profile
RoHS compliant
Applications
Uninterruptible Power Supply (UPS)
Induction heating
Welding equipment
High-speed rectifiers
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Datasheet
Description
Features
Silicon carbide (SiC) Schottky diode
Zero reverse recovery
Zero forward recovery
Temperature-independ
ent switching behavior
Positive temperature coefficient on VF
High blocking voltage
Very low stray inductance
Aluminum Nitride (AlN) substrate for improved thermal performance
Benefits
Outstanding performance at high-frequency operation
Solderable terminals for easy PCB mounting
Direct mounting to heatsink (isolated package)
Low profile
RoHS compliant
Applications
Uninterruptible Power Supply (UPS)
Induction heating
Welding equipment
High-speed rectifiers
Features
Silicon carbide (SiC) Schottky diode
Zero reverse recovery
Zero forward recovery
Temperature-independ
ent switching behavior
Positive temperature coefficient on VF
High blocking voltage
Very low stray inductance
Aluminum Nitride (AlN) substrate for improved thermal performance
Benefits
Outstanding performance at high-frequency operation
Solderable terminals for easy PCB mounting
Direct mounting to heatsink (isolated package)
Low profile
RoHS compliant
Applications
Uninterruptible Power Supply (UPS)
Induction heating
Welding equipment
High-speed rectifiers
Features
Silicon carbide (SiC) Schottky diode
Zero reverse recovery
Zero forward recovery
Temperature-independent switching behavior
Positive temperature coefficient on VF
High blocking voltage
Very low stray inductance
Aluminum Nitride (AlN) substrate for improved thermal performance
Benefits
Outstanding performance at high-frequency operation
