Features
SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature Independent switching behavior, Positive temperature coefficient on VF
Very Low stray inductance
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction-to-case thermal resistance
RoHS Compliant
Applications
Welding equipment
Switched mode power supplies
Induction heating
Richardson RFPD
Acme Chip Technology Co., Limited
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Datasheet
Description
Features
SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature Independent switching behavior, Positive temperature coefficient on VF
Very Low stray inductance
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction-to-case thermal resistance
RoHS Compliant
Applications
Welding equipment
Switched mode power supplies
Induction heating
Features
SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature Independent switching behavior, Positive temperature coefficient on VF
Very Low stray inductance
High level of integration
Benefits
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction-to-case thermal resistance
RoHS Compliant
Applications
Welding equipment
Switched mode power supplies
Induction heating
Features
SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature Independent switching behavior, Positive temperature coefficient on VF
Very Low stray inductance
High level of integration
Benefits
Outstanding performance at high frequency operation
