Features
Silicon carbide (SiC) Schottky diode
Zero reverse recovery
Zero forward recovery
Temperature-independ
ent switching behavior
Positive temperature coefficient on VF
Very low stray inductance
High level of integration
Benefits
Outstanding performance at high-frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
RoHS compliant
Applications
Switch mode power supplies rectifier
Induction heating
Welding equipment
High-speed rectifiers
Richardson RFPD
Acme Chip Technology Co., Limited
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Datasheet
Description
Features
Silicon carbide (SiC) Schottky diode
Zero reverse recovery
Zero forward recovery
Temperature-independ
ent switching behavior
Positive temperature coefficient on VF
Very low stray inductance
High level of integration
Benefits
Outstanding performance at high-frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
RoHS compliant
Applications
Switch mode power supplies rectifier
Induction heating
Welding equipment
High-speed rectifiers
Features
Silicon carbide (SiC) Schottky diode
Zero reverse recovery
Zero forward recovery
Temperature-independ
ent switching behavior
Positive temperature coefficient on VF
Very low stray inductance
High level of integration
Benefits
Outstanding performance at high-frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
RoHS compliant
Applications
Switch mode power supplies rectifier
Induction heating
Welding equipment
High-speed rectifiers
Features
Silicon carbide (SiC) Schottky diode
Zero reverse recovery
Zero forward recovery
Temperature-independent switching behavior
Positive temperature coefficient on VF
Very low stray inductance
High level of integration
Benefits
Outstanding performance at high-frequency operation
