Features
SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature Independent switching behavior, Positive temperature coefficient on VF
High Blocking voltage
Very low stray inductance
AlN substrate for improved thermal performance
Benefits
Outstanding performance at high frequency operation
Solderable terminals for easy PCB mounting
Direct mounting to heatsink (isolated package)
Low profile
RoHS Compliant
Applications
Welding equipment
Uninterruptible Power Supplies
Switched mode power supplies
Acme Chip Technology Co., Limited
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Datasheet
Description
Features
SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature Independent switching behavior, Positive temperature coefficient on VF
High Blocking voltage
Very low stray inductance
AlN substrate for improved thermal performance
Benefits
Outstanding performance at high frequency operation
Solderable terminals for easy PCB mounting
Direct mounting to heatsink (isolated package)
Low profile
RoHS Compliant
Applications
Welding equipment
Uninterruptible Power Supplies
Switched mode power supplies
Features
SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature Independent switching behavior, Positive temperature coefficient on VF
High Blocking voltage
Very low stray inductance
AlN substrate for improved thermal performance
Benefits
Outstanding performance at high frequency operation
Solderable terminals for easy PCB mounting
Direct mounting to heatsink (isolated package)
Low profile
RoHS Compliant
Applications
Welding equipment
Uninterruptible Power Supplies
Switched mode power supplies
Features
SiC Schottky Diode: Zero reverse recovery, Zero forward recovery, Temperature Independent switching behavior, Positive temperature coefficient on VF
High Blocking voltage
Very low stray inductance
AlN substrate for improved thermal performance
Benefits
Outstanding performance at high frequency operation
