Microsemi’s GaAs Gunn diodes, epi-up (anode heatsink), are fabricated from epitaxial layers grown at MSC by the Vapor Phase Epitaxy technique. The layers are processed using proprietary techniques resulting in ultra- low phase and 1/f noise. The diodes are available in a variety of microwave ceramic packages for operation from 9.5–35.5 GHz.
| Richardson RFPD | |
|---|---|
| Product Category | RF Diodes |
| Product Number | MG1052-30 |
| Product Name | RF Gunn Diode |
| Diode Type | Gunn Diodes |
