Microchip Technology, Inc. Silicon Carbide Diode Module MSCDC50H701AG

Description
Features Silicon carbide (SiC) Schottky diode Zero reverse recovery Zero forward recovery Temperature-independ ent switching behavior Positive temperature coefficient on VF High blocking voltage Very low stray inductance Aluminum Nitride (AlN) substrate for improved thermal performance Benefits Outstanding performance at high-frequency operation Solderable terminals for easy PCB mounting Direct mounting to heatsink (isolated package) Low profile RoHS compliant Applications Uninterruptible Power Supply (UPS) Induction heating Welding equipment High-speed rectifiers
Request a Quote Datasheet
Description
Features Silicon carbide (SiC) Schottky diode Zero reverse recovery Zero forward recovery Temperature-independ ent switching behavior Positive temperature coefficient on VF High blocking voltage Very low stray inductance Aluminum Nitride (AlN) substrate for improved thermal performance Benefits Outstanding performance at high-frequency operation Solderable terminals for easy PCB mounting Direct mounting to heatsink (isolated package) Low profile RoHS compliant Applications Uninterruptible Power Supply (UPS) Induction heating Welding equipment High-speed rectifiers
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Downers Grove, IL, United States
Silicon Carbide Diode Module
MSCDC50H701AG
Silicon Carbide Diode Module MSCDC50H701AG
Features Silicon carbide (SiC) Schottky diode Zero reverse recovery Zero forward recovery Temperature-independ ent switching behavior Positive temperature coefficient on VF High blocking voltage Very low stray inductance Aluminum Nitride (AlN) substrate for improved thermal performance Benefits Outstanding performance at high-frequency operation Solderable terminals for easy PCB mounting Direct mounting to heatsink (isolated package) Low profile RoHS compliant Applications Uninterruptible Power Supply (UPS) Induction heating Welding equipment High-speed rectifiers

Features

  • Silicon carbide (SiC) Schottky diode
  • Zero reverse recovery
  • Zero forward recovery
  • Temperature-independent switching behavior
  • Positive temperature coefficient on VF
  • High blocking voltage
  • Very low stray inductance
  • Aluminum Nitride (AlN) substrate for improved thermal performance

Benefits

  • Outstanding performance at high-frequency operation
  • Solderable terminals for easy PCB mounting
  • Direct mounting to heatsink (isolated package)
  • Low profile
  • RoHS compliant

Applications

  • Uninterruptible Power Supply (UPS)
  • Induction heating
  • Welding equipment
  • High-speed rectifiers
Supplier's Site Datasheet
Discrete Semiconductor Products - Diodes - Bridge Rectifiers - MSCDC50H701AG - Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Diodes - Bridge Rectifiers
MSCDC50H701AG
Discrete Semiconductor Products - Diodes - Bridge Rectifiers MSCDC50H701AG
PM-DIODE-SIC-SBD-SP1 F

PM-DIODE-SIC-SBD-SP1F

Supplier's Site

Technical Specifications

  Richardson RFPD Acme Chip Technology Co., Limited
Product Category Diodes Rectifiers
Product Number MSCDC50H701AG MSCDC50H701AG
Product Name Silicon Carbide Diode Module Discrete Semiconductor Products - Diodes - Bridge Rectifiers
RoHS Compliant RoHS
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