This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C. These diodes series are ideal for applications where improvements in efficiency, reliability, and thermal management are desired. Positive temperature coefficient for safe operation and ease of paralleling 175 °C maximum operating junction temperature Excellent surge capability Extremely fast, temperature-independ
ent switching behavior Dramatically reduced switching losses compared to Si bipolar diodes Zero reverse recovery current Copper base plate with AlN isolation for low thermal resistance Isolation voltage: 3000 V UL Recognized under File E72873
This series of silicon carbide (SiC) Schottky diodes has negligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C. These diodes series are ideal for applications where improvements in efficiency, reliability, and thermal management are desired. Positive temperature coefficient for safe operation and ease of paralleling 175 °C maximum operating junction temperature Excellent surge capability Extremely fast, temperature-independent switching behavior Dramatically reduced switching losses compared to Si bipolar diodes Zero reverse recovery current Copper base plate with AlN isolation for low thermal resistance Isolation voltage: 3000 V UL Recognized under File E72873
