Littelfuse, Inc. Series: SiC Schottky Diodes DCK20I1200HA

Description
This series of silicon carbide (SiC) Schottky diodes has neg­ligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C. These diodes series are ideal for applications where improvements in efficiency, reliability, and thermal management are desired. Positive temperature coefficient for safe operation and ease of paralleling 175°C maximum operating junction temperature Excellent surge capability Extremely fast, temperature-independ ent switching behavior Dramatically reduced switching losses compared to Si bipolar diodes MSL 1 rated
Datasheet
Description
This series of silicon carbide (SiC) Schottky diodes has neg­ligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C. These diodes series are ideal for applications where improvements in efficiency, reliability, and thermal management are desired. Positive temperature coefficient for safe operation and ease of paralleling 175°C maximum operating junction temperature Excellent surge capability Extremely fast, temperature-independ ent switching behavior Dramatically reduced switching losses compared to Si bipolar diodes MSL 1 rated
Datasheet

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Series: SiC Schottky Diodes - DCK20I1200HA - Littelfuse, Inc.
Rosemont, IL, United States
Series: SiC Schottky Diodes
DCK20I1200HA
Series: SiC Schottky Diodes DCK20I1200HA
This series of silicon carbide (SiC) Schottky diodes has neg­ligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C. These diodes series are ideal for applications where improvements in efficiency, reliability, and thermal management are desired. Positive temperature coefficient for safe operation and ease of paralleling 175°C maximum operating junction temperature Excellent surge capability Extremely fast, temperature-independ ent switching behavior Dramatically reduced switching losses compared to Si bipolar diodes MSL 1 rated

This series of silicon carbide (SiC) Schottky diodes has neg­ligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C. These diodes series are ideal for applications where improvements in efficiency, reliability, and thermal management are desired. Positive temperature coefficient for safe operation and ease of paralleling 175°C maximum operating junction temperature Excellent surge capability Extremely fast, temperature-independent switching behavior Dramatically reduced switching losses compared to Si bipolar diodes MSL 1 rated

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Technical Specifications

  Littelfuse, Inc.
Product Category Schottky Diodes
Product Number DCK20I1200HA
Product Name Series: SiC Schottky Diodes
VF 1.48 volts
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