Littelfuse, Inc. Series: SiC Schottky Diodes DCK10I1200PA

This series of silicon carbide (SiC) Schottky diodes has neg­ligible reverse recovery current, high surge capability, and a maximum operating junction temperature of 175 °C. These diodes series are ideal for applications where improvements in efficiency, reliability, and thermal management are desired. Positive temperature coefficient for safe operation and ease of paralleling 175°C maximum operating junction temperature Excellent surge capability Extremely fast, temperature-independ ent switching behavior Dramatically reduced switching losses compared to Si bipolar diodes MSL 1 rated