Infineon Technologies AG Datasheets for Metal-Oxide Semiconductor FET (MOSFET)
Metal-oxide semiconductor field-effect transistors (MOSFETs) are electronic switching devices with a conducting channel as the output. An electrode called a gate controls the width of the channel and determines how well the MOSFET conducts.
Metal-Oxide Semiconductor FET (MOSFET): Learn more
| Product Name | Notes |
|---|---|
| -20V Single P-Channel StrongIRFET™ MOSFET in a TSOP-6 (Micro 6) package The StrongIRFET™ power MOSFET family is optimized for low RDS(on) and high current capability. The devices are ideal... | |
| 100V HEXFET Power MOSFET in a D-Pak package Benefits Optimized for broadest availability from distribution partners Product qualification according to JEDEC standard Logic level : Optimized for 10 V gate... | |
| 100V Single N-Channel IR MOSFET in a D-Pak package The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various... | |
| 55V Single N-Channel IR MOSFET in a D-Pak package The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various... | |
| 55V Single N-Channel Power MOSFET in a D2-Pak package Summary of Features Planar cell structure for wide SOA Optimized for broadest availability from distribution partners Product qualification according to JEDEC... | |
| 55V Single N-Channel Power MOSFET in a I-Pak package The IR MOSFET family of power MOSFETs utilizes proven silicon processes offering designers a wide portfolio of devices to support various... | |
| 60V Single N-Channel HEXFET Power MOSFET in a D2-Pak package Applications Fuel-cell control unit (FCCU) Benefits Optimized for broadest availability from distribution partners Product qualification according to JEDEC standard Logic... | |
| ISC165N15NM6 leverages OptiMOS™ 6 150 V unparalleled performance and robustness for a suitable alternative to legacy OptiMOS™ 3 150 V products. OptiMOS™ 6 150 V technology was designed to fulfill... | |
| Low voltage power MOSFETs offering broad accessibility and competitive price/performance ratio With the combined portfolio of Infineon's OptiMOS™ and StrongIRFET power MOSFET families, Infineon offers the right choice for all... | |
| OptiMOS™ 5 low-voltage MOSFETs 40V normal level offered in SuperSO8 package With the OptiMOSTM 5 40V normal level product family Infineon offers a benchmark solution for applications requiring normal... | |
| OptiMOS™ 5 Single N-Channel Linear FET 100 V, 3.55 mΩ, 164 A in a SuperSO8 (5x6) package ISC035N10NM5LF2 is Infineon’s new best-in-class 100 V OptiMOS™ 5 Linear FET in a... | |
| OptiMOS™ 5 Single N-Channel Linear FET 80 V, 2.55 mΩ, 199 A in a SuperSO8 (5x6) package ISC025N08NM5LF2 is Infineon’s new best-in-class 80 V OptiMOS™ 5 Linear FET in a... | |
| OptiMOS™ 5 Single N-Channel Power MOSFET 60 V, 1.05 mΩ, 330 A in a SSO8 package Infineon’s OptiMOS™ 5 Power MOSFET 60V in SuperSO8 package (ISC010N06NM5) offers low on-state resistance... | |
| OptiMOS™ 6 dual N-channel 40 V MOSFETs in a scalable power block package Dual N-channel MOSFETs in PQFN 6.3x6.0 features very low RDS(on) of 0.88 mΩ each with Q1/Q2... | |
| OptiMOS™ 6 dual N-channel 40 V MOSFETs in scalable power block with dual-side cooling capability Dual N-channel MOSFETs in PQFN 6.3x6.0 features low RDS(on) of 0.88 mΩ each with... | |
| OptiMOS™ 6 n-channel power MOSFET 80 V in SuperSO8 Dual-Side Cooling OptiMOS™ 6 80 V - the latest power MOSFET technology offering industry benchmark performance. Compared to its predecessor, OptiMOS™ | |
| OptiMOS™ 6 n-channel power MOSFET 80 V in SuperSO8 OptiMOS™ 6 80 V - the latest power MOSFET technology setting the new industry benchmark performance with a wide portfolio... | |
| OptiMOS™ 6 power MOSFET 100 V Normal Level in SuperSO8 package ISC022N10NM6 OptiMOS™ 6 100 V in normal level is setting the new technology standard in the field of discrete... | |
| OptiMOS™ 6 power MOSFET 100 V Normal Level in SuperSO8 package ISC027N10NM6 OptiMOS™ 6 100 V in normal level is setting the new technology standard in the field of discrete... | |
| OptiMOS™ 6 power MOSFET 100 V Normal Level in SuperSO8 package ISC030N10NM6 OptiMOS™ 6 100 V in normal level is setting the new technology standard in the field of discrete... | |
| OptiMOS™ 6 power MOSFET 100 V Normal Level in SuperSO8 package ISC060N10NM6 OptiMOS™ 6 100 V in normal level is setting the new technology standard in the field of discrete... | |
| OptiMOS™ 6 power MOSFET 100 V Normal Level in SuperSO8 package ISC080N10NM6 OptiMOS™ 6 100 V in normal level is setting the new technology standard in the field of discrete... | |
| OptiMOS™ 6 power MOSFET 100 V Normal Level in SuperSO8 package ISC230N10NM6 OptiMOS™ 6 100 V in normal level is setting the new technology standard in the field of discrete... | |
| OptiMOS™ 6 power MOSFET 135 V Normal Level in SuperSO8 package The OptiMOS™ 6 135 V MOSFET technology is a cost-efficient solution optimized for motor drives, but also adaptable for... | |
| OptiMOS™ 6 power MOSFET 150 V normal level in SuperSO8 package ISC044N15NM6 OptiMOS™ 6 150 V in normal level is setting a new level of performance within the highly competitive... | |
| OptiMOS™ 6 power MOSFET 150 V normal level in SuperSO8 package ISC055N15NM6 OptiMOS™ 6 150 V in normal level is setting a new level of performance within the highly competitive... | |
| OptiMOS™ 6 power MOSFET 150 V normal level in SuperSO8 package ISC079N15NM6 OptiMOS™ 6 150 V in normal level is setting a new level of performance within the highly competitive... | |
| OptiMOS™ 6 power MOSFET 200 V normal level in SuperSO8 package ISC130N20NM6 OptiMOS™ 6 200 V is setting the new technology standard. It addresses the need for high power density,... | |
| OptiMOS™ 6 power MOSFET 200 V normal level in SuperSO8 package ISC151N20NM6 OptiMOS™ 6 200 V is setting the new technology standard. It addresses the need for high power density,... | |
| OptiMOS™ 6 power MOSFET 40 V normal level in a SSO8 package The ISC012N04NM6 is part of the BiC OptiMOSTM 6 40V NL product family, offering a benchmark solution... | |
| OptiMOS™ 6 power MOSFET 40 V normal level with latest Infineon technology in a SuperSO8 package With this best-in-class OptiMOSTM 6 power MSOFET 40V normal level, Infineon offers a... | |
| OptiMOS™ 6 power MOSFET logic level 120 V in SuperSO8 package This is a logic level 120 V MOSFET in SuperSO8 packaging with 3.2 mOhm on-resistance. ISC032N12LM6 is part of... | |
| OptiMOS™ 6 power MOSFET logic level 120 V in SuperSO8 package This is a logic level 120 V MOSFET in SuperSO8 packaging with 32 mOhm on-resistance. ISC320N12LM6 is part of... | |
| OptiMOS™ 6 power MOSFET logic level 120 V in SuperSO8 package This is a logic level 120 V MOSFET in SuperSO8 packaging with 10.4 mOhm on-resistance. ISC104N12LM6 is part of... | |
| OptiMOS™ 6 power MOSFET logic level 120 V in SuperSO8 package This is a logic level 120 V MOSFET in SuperSO8 packaging with 7.3 mOhm on-resistance. ISC073N12LM6 is part of... | |
| OptiMOS™ 6 power MOSFET normal level 120 V in SuperSO8 package This is a normal level 120 V MOSFET in SuperSO8 packaging with 11 mOhm on-resistance. ISC110N12NM6 is part of... | |
| OptiMOS™ 6 power MOSFET normal level 120 V in SuperSO8 package This is a normal level 120 V MOSFET in SuperSO8 packaging with 3.7 mOhm on-resistance. ISC037N12NM6 is part of... | |
| OptiMOS™ 6 power MOSFET normal level 120 V in SuperSO8 package This is a normal level 120 V MOSFET in SuperSO8 packaging with 7.8 mOhm on-resistance. ISC078N12NM6 is part of... | |
| OptiMOS™ 7 power MOSFET 15 V in PQFN 2x2 ISK018NE1LM7 is part of the first 15 V rated trench power MOSFETs portfolio in the industry, featuring very low RDS... | |
| OptiMOS™ Dual N+N channel power MOSFET 40 V in SO-8 package With the new OptiMOS™ Dual power MOSFET 40 V (ISA170170N04LMDS) in SO-8 package, Infineon offers a benchmark solution for... | |
| OptiMOS™ Dual N+N channel power MOSFET 40 V in SO-8 package With the new OptiMOS™ Dual power MOSFET 40 V (ISA250250N04LMDS) in SO-8 package, Infineon offers a benchmark solution for... | |
| OptiMOS™ Dual N+P channel power MOSFET 30 V in SO-8 package With the new OptiMOS™ Dual power MOSFET 30 V (ISA150233C03LMDS) in SO-8 package, Infineon offers a benchmark solution for... | |
| OptiMOS™ Dual N+P channel power MOSFET 30 V in SO-8 package With the new OptiMOS™ Dual power MOSFET 30 V (ISA220280C03LMDS) in SO-8 package, Infineon offers a benchmark solution for... | |
| OptiMOS™ Dual N+P channel power MOSFET 40 V in SO-8 package With the new OptiMOS™ Dual power MOSFET 40 V (ISA170230C04LMDS) in SO-8 package, Infineon offers a benchmark solution for... | |
| OptiMOS™ Dual N+P channel power MOSFET 40 V in SO-8 package With the new OptiMOS™ Dual power MOSFET 40 V (ISA250300C04LMDS) in SO-8 package, Infineon offers a benchmark solution for... | |
| OptiMOS™ PD power MOSFET is Infineon’s portfolio targeting USB-PD and adapter applications. The products offer fast ramp-up and optimized lead times. OptiMOS™ low-voltage MOSFETs for power delivery enable designs with... | |
| P-channel MOSFETs in logic level, reducing design complexity in medium and low power applications OptiMOS™ P-channel MOSFETs 100 V in SuperSO8 package represents the new technology targeted for battery management,... | |
| P-channel MOSFETs in logic level, reducing design complexity in medium and low power applications OptiMOS™ P-channel MOSFETs 150 V in SuperSO8 package represents the new technology targeted for battery management,... | |
| P-channel MOSFETs in logic level, reducing design complexity in medium and low power applications OptiMOS™ P-channel MOSFETs 60 V in SuperSO8 package represents the new technology targeted for battery management,... | |
| The ISC011N06LM5, Infineon's OptiMOS™ MOSFET in the SuperSO8 package extends the OptiMOS™ 5 and 3 product portfolio and enables higher power density in addition to improved robustness, responding to the... | |
| The ISC012N04LM6 OptiMOSTM 6 40V in logic level is setting a new technology standard in the field of discrete power MOSFETs. Compared to alternative products, Infineon’s leading thin wafer... | |
| Unleash maximum power with the next best-in-class OptiMOS™ 7 40 V power MOSFET in a PQFN 5x6 ISCH42N04LM7 is the best-in-class 40 V power MOSFET in a PQFN 5x6 in... |
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