Microchip Technology, Inc. TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT12040L2FLLG APT12040L2FLLG

Description
Manufacturer: Microchip Technology Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1045800-APT12040L2FL LG Current Rating: 30 A Drain to Source Voltage (Vdss): 1.2 kV Number of Elements: 1 Input Capacitance: 7.25 nF Number of Pins: 3 Rise Time: 14 ns Fall Time: 24 ns Categories: Transistors - FETs, MOSFETs - RF Alternative Parts (Cross-Reference): STP12N120K5; STW12N120K5; STP6N120K3; IPA90R340C3XKSA1; FQP2N90; FQP9N90C; Popularity: Low Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C Lead Free: Yes Mount: Through Hole RoHS: Compliant Radiation Hardening: No Min Operating Temperature: -55 °C Voltage Rating (DC): 1.2 kV Turn-On Delay Time: 21 ns Continuous Drain Current (ID): 30 A Turn-Off Delay Time: 67 ns Gate to Source Voltage (Vgs): 30 V
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Description
Manufacturer: Microchip Technology Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1045800-APT12040L2FL LG Current Rating: 30 A Drain to Source Voltage (Vdss): 1.2 kV Number of Elements: 1 Input Capacitance: 7.25 nF Number of Pins: 3 Rise Time: 14 ns Fall Time: 24 ns Categories: Transistors - FETs, MOSFETs - RF Alternative Parts (Cross-Reference): STP12N120K5; STW12N120K5; STP6N120K3; IPA90R340C3XKSA1; FQP2N90; FQP9N90C; Popularity: Low Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C Lead Free: Yes Mount: Through Hole RoHS: Compliant Radiation Hardening: No Min Operating Temperature: -55 °C Voltage Rating (DC): 1.2 kV Turn-On Delay Time: 21 ns Continuous Drain Current (ID): 30 A Turn-Off Delay Time: 67 ns Gate to Source Voltage (Vgs): 30 V
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TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT12040L2FLLG - 1045800-APT12040L2FLLG - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT12040L2FLLG
1045800-APT12040L2FLLG
TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT12040L2FLLG 1045800-APT12040L2FLLG
Manufacturer: Microchip Technology Storage Condition: Dry storage cabinet & Humidity protection package Win Source Part Number: 1045800-APT12040L2FL LG Current Rating: 30 A Drain to Source Voltage (Vdss): 1.2 kV Number of Elements: 1 Input Capacitance: 7.25 nF Number of Pins: 3 Rise Time: 14 ns Fall Time: 24 ns Categories: Transistors - FETs, MOSFETs - RF Alternative Parts (Cross-Reference): STP12N120K5; STW12N120K5; STP6N120K3; IPA90R340C3XKSA1; FQP2N90; FQP9N90C; Popularity: Low Fake Threat In the Open Market: 65 pct. Supply and Demand Status: Shortage Maximum Operating Temperature: 150 °C Lead Free: Yes Mount: Through Hole RoHS: Compliant Radiation Hardening: No Min Operating Temperature: -55 °C Voltage Rating (DC): 1.2 kV Turn-On Delay Time: 21 ns Continuous Drain Current (ID): 30 A Turn-Off Delay Time: 67 ns Gate to Source Voltage (Vgs): 30 V

Manufacturer: Microchip Technology
Storage Condition: Dry storage cabinet & Humidity protection package
Win Source Part Number: 1045800-APT12040L2FLLG
Current Rating: 30 A
Drain to Source Voltage (Vdss): 1.2 kV
Number of Elements: 1
Input Capacitance: 7.25 nF
Number of Pins: 3
Rise Time: 14 ns
Fall Time: 24 ns
Categories: Transistors - FETs, MOSFETs - RF
Alternative Parts (Cross-Reference): STP12N120K5; STW12N120K5; STP6N120K3; IPA90R340C3XKSA1; FQP2N90; FQP9N90C;
Popularity: Low
Fake Threat In the Open Market: 65 pct.
Supply and Demand Status: Shortage
Maximum Operating Temperature: 150 °C
Lead Free: Yes
Mount: Through Hole
RoHS: Compliant
Radiation Hardening: No
Min Operating Temperature: -55 °C
Voltage Rating (DC): 1.2 kV
Turn-On Delay Time: 21 ns
Continuous Drain Current (ID): 30 A
Turn-Off Delay Time: 67 ns
Gate to Source Voltage (Vgs): 30 V

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Power FREDFET Transistor - APT12040L2FLLG - Richardson RFPD
Downers Grove, IL, United States
Power FREDFET Transistor
APT12040L2FLLG
Power FREDFET Transistor APT12040L2FLLG
Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode Power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure.

Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode Power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure.

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Technical Specifications

  Win Source Electronics Richardson RFPD
Product Category Metal-Oxide Semiconductor FET (MOSFET) Transistors
Product Number 1045800-APT12040L2FLLG APT12040L2FLLG
Product Name TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT12040L2FLLG Power FREDFET Transistor
TJ -55 C (-67 F)
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