Microchip Technology, Inc. Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single APT1201R6BVFRG

Win Source Part Number: 1031510-APT1201R6BVFRG
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: POWER MOS V®
Package: Tube
Standard Package: 1
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 8A (Tc)
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 4A, 10V
Vgs(th) (Max) @ Id: 4V @ 1mA
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247 [B]
Gate Charge (Qg) (Max) @ Vgs: 230 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3660 pF @ 25 V
Alternative Parts (Cross-Reference): STW11NK100Z; STW12NK95Z; STW11NK90Z; FQH8N100C; IPW90R1K0C3FKSA1; IPW90R800C3FKSA1;
ECCN: EAR99
Fake Threat In the Open Market: 53 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Microchip Technology
Base Product Number: APT1201

MOSFET N-CH 1200V 8A TO247 Product overview: APT1201R6BVFRG from Microchip Technology is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 8A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1200V, 8A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-APT1201R6BVFRG can be used for catalog matching and distributor lookup.

Power MOS V® is a new generation of high voltage N-Channel enhancement mode Power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.

N-Channel 1200V 8A (Tc) Through Hole TO-247 [B]