Microchip Technology, Inc. Silicon Carbide/Silicon Hybrid Modules APT15GF120JCU2

The APT15GF120JCU2 is a combined NPT IGBT and SiC Schottky diode in an ISOTOP® (SOT-227) package for high-frequency boost chopper applications. It handles 1200 V collector-emitter voltage and 15 A continuous current at 90°C case temperature, with a maximum power dissipation of 156 W at 25°C. The IGBT switches up to 50 kHz with low tail current and rated RBSOA and SCSOA. The SiC diode has zero reverse recovery, positive temperature coefficient on forward voltage, and operates up to 175°C junction temperature. The package provides 2500 V RMS isolation, direct heatsink mounting, and thermal resistances of 0.8 °C/W (IGBT) and 1.65 °C/W (diode). It is RoHS compliant and operates from -55°C to 150°C. Dimensions are 31.5 mm × 12.2 mm × 15.1 mm.