N-Channel 1000V 11A (Tc) Through Hole TO-247 [B]
Power MOS V® is a new generation of high voltage N-Channel enhancement mode Power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.
MOSFET N-CH 1000V 11A TO247
| DigiKey | Richardson RFPD | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|
| Product Category | Transistors | Transistors | RF Transistors |
| Product Number | APT1001RBVFRG-ND | APT1001RBVFRG | APT1001RBVFRG |
| Product Name | Single FETs, MOSFETs | Power FREDFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Polarity | N-Channel |
