Microchip Technology, Inc. Silicon Carbide/Silicon Hybrid Modules APT25GF120JCU2

The APT25GF120JCU2 is a combined NPT IGBT and SiC Schottky diode in an ISOTOP® (SOT-227) package for high-frequency boost chopper applications. It operates at 1200 V collector-emitter voltage and supports 25 A continuous collector current at 90°C case temperature, with switching up to 50 kHz. The IGBT has a collector-emitter saturation voltage of 3.2 V at 25°C and 4.0 V at 125°C, and a reverse bias safe operating area of 50 A at 1150 V and 125°C. The SiC diode has zero reverse recovery, a forward voltage of 1.8 V at 10 A and 25°C, and maximum reverse leakage of 1000 µA at 175°C. Junction-to-case thermal resistance is 0.55 °C/W for the IGBT and 1.65 °C/W for the diode. The package provides 2500 V RMS isolation, direct heatsink mounting, and RoHS compliance. Operation is rated from -55°C to 150°C junction temperature.