Microchip Technology, Inc. Power IGBT Transistor APT150GN120JDQ4

Description
Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built-in gate resistor ensures extremely reliable operation, even in the event of a short circuit fault. Low gate charge simplifies gate drive design and minimizes losses.
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Description
Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built-in gate resistor ensures extremely reliable operation, even in the event of a short circuit fault. Low gate charge simplifies gate drive design and minimizes losses.
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Suppliers

Company
Product
Description
Supplier Links
Power IGBT Transistor - APT150GN120JDQ4 - Richardson RFPD
Downers Grove, IL, United States
Power IGBT Transistor
APT150GN120JDQ4
Power IGBT Transistor APT150GN120JDQ4
Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built-in gate resistor ensures extremely reliable operation, even in the event of a short circuit fault. Low gate charge simplifies gate drive design and minimizes losses.

Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built-in gate resistor ensures extremely reliable operation, even in the event of a short circuit fault. Low gate charge simplifies gate drive design and minimizes losses.

Supplier's Site
Singapore
1200V 215A 625W IGBT Transistor
297-APT150GN120JDQ4
1200V 215A 625W IGBT Transistor 297-APT150GN120JDQ4
IGBT MOD 1200V 215A 625W ISOTOP Product overview: APT150GN120JDQ4 from Microchip Technology is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 215A, 625W. Search-friendly keywords include IGBT Transistor, IGBT Modules, electronic component, datasheet, replacement part, 1200V, 215A, 625W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 297-APT150GN120JDQ4 can be used for catalog matching and distributor lookup.

IGBT MOD 1200V 215A 625W ISOTOP Product overview: APT150GN120JDQ4 from Microchip Technology is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 215A, 625W. Search-friendly keywords include IGBT Transistor, IGBT Modules, electronic component, datasheet, replacement part, 1200V, 215A, 625W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 297-APT150GN120JDQ4 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
IGBTs - Modules - APT150GN120JDQ4 - 911626-APT150GN120JDQ4 - Win Source Electronics
Laguna Hills, CA, United States
IGBTs - Modules - APT150GN120JDQ4
911626-APT150GN120JDQ4
IGBTs - Modules - APT150GN120JDQ4 911626-APT150GN120JDQ4
Manufacturer: Microchip Technology Win Source Part Number: 911626-APT150GN120JD Q4 Operating Temperature Range: -55°C ~ 150°C (TJ) Features: IGBT Module Trench Field Stop Single 1200 V 215 A 625 W Chassis Mount ISOTOP® Package: SOT-227-4, miniBLOC Package: Tube Mounting: Chassis Mount Family Name: APT150 Categories: Discrete Semiconductor Products Case / Package: ISOTOP® ECCN: EAR99 Popularity: High Fake Threat In the Open Market: 41 pct. Supply and Demand Status: Balance Quantity per package: 1 MSL Level: 1 (Unlimited) Estimated Pruduction Lead Time: 28 Weeks REACH Status: REACH Unaffected HTSUS: 8541.29.0095

Manufacturer: Microchip Technology
Win Source Part Number: 911626-APT150GN120JDQ4
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: IGBT Module Trench Field Stop Single 1200 V 215 A 625 W Chassis Mount ISOTOP®
Package: SOT-227-4, miniBLOC
Package: Tube
Mounting: Chassis Mount
Family Name: APT150
Categories: Discrete Semiconductor Products
Case / Package: ISOTOP®
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Balance
Quantity per package: 1
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 28 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - IGBTs - APT150GN120JDQ4 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - IGBTs
APT150GN120JDQ4
Discrete Semiconductor Products - Transistors - IGBTs APT150GN120JDQ4
IGBT MOD 1200V 215A 625W ISOTOP

IGBT MOD 1200V 215A 625W ISOTOP

Supplier's Site

Technical Specifications

  Richardson RFPD ERSAELECTRONICS PTE. LTD. Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT) Insulated Gate Bipolar Transistors (IGBT)
Product Number APT150GN120JDQ4 297-APT150GN120JDQ4 911626-APT150GN120JDQ4 APT150GN120JDQ4
Product Name Power IGBT Transistor 1200V 215A 625W IGBT Transistor IGBTs - Modules - APT150GN120JDQ4 Discrete Semiconductor Products - Transistors - IGBTs
Package Type SOT-227 Tube SOT3; ISOTOP®
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