Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure.
MOSFET N-CH 1200V 12A TO247
| Richardson RFPD | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|
| Product Category | Transistors | RF Transistors |
| Product Number | APT1201R2BLLG | APT1201R2BLLG |
| Product Name | Power FREDFET Transistor | Discrete Semiconductor Products - Transistors - FETs, MOSFETs |
| Transistor Type | Power FREDFET Transistor |
