Microchip Technology, Inc. Single FETs, MOSFETs APT14F100B

Description
N-Channel 1000V 14A (Tc) 500W (Tc) Through Hole TO-247 [B]
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Description
N-Channel 1000V 14A (Tc) 500W (Tc) Through Hole TO-247 [B]
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Single FETs, MOSFETs - APT14F100B-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
APT14F100B-ND
Single FETs, MOSFETs APT14F100B-ND
N-Channel 1000V 14A (Tc) 500W (Tc) Through Hole TO-247 [B]

N-Channel 1000V 14A (Tc) 500W (Tc) Through Hole TO-247 [B]

Buy Now Datasheet
Power FREDFET Transistor - APT14F100B - Richardson RFPD
Downers Grove, IL, United States
Power FREDFET Transistor
APT14F100B
Power FREDFET Transistor APT14F100B
Power MOS 8™ is a high speed, high voltage N-channel switch-mode Power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly reduced ratio of Crss/Ciss result in excellent noise immunity and low switching loss. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control di/dt during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency.

Power MOS 8™ is a high speed, high voltage N-channel switch-mode Power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly reduced ratio of Crss/Ciss result in excellent noise immunity and low switching loss. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control di/dt during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency.

Supplier's Site
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - 1324612-APT14F100B - Win Source Electronics
Laguna Hills, CA, United States
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single
1324612-APT14F100B
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single 1324612-APT14F100B
Manufacturer: Microchip Technology Win Source Part Number: 1324612-APT14F100B Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single Packaging: Tube Standard Package: 1 Mounting: Through Hole Technology: MOSFET (Metal Oxide) FET Type: N-Channel Drain to Source Voltage (Vdss): 1000 V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) Rds On (Max) @ Id, Vgs: 980mOhm @ 7A, 10V Vgs(th) (Max) @ Id: 5V @ 1mA Power Dissipation (Max): 500W (Tc) Supplier Device Package: TO-247 [B] Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3965 pF @ 25 V Vgs (Max): ±30V Temperature Range - Operating: -55°C ~ 150°C (TJ) Case / Package: TO-247-3 ECCN: EAR99 Fake Threat In the Open Market: 80 MSL Level: 1 (Unlimited) REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Base Product Number: APT14F100 Drive Voltage (Max Rds On, Min Rds On): 10V RoHS Status: RoHS Compliant

Manufacturer: Microchip Technology
Win Source Part Number: 1324612-APT14F100B
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Packaging: Tube
Standard Package: 1
Mounting: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 1000 V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 980mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 500W (Tc)
Supplier Device Package: TO-247 [B]
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3965 pF @ 25 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Case / Package: TO-247-3
ECCN: EAR99
Fake Threat In the Open Market: 80
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Base Product Number: APT14F100
Drive Voltage (Max Rds On, Min Rds On): 10V
RoHS Status: RoHS Compliant

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - APT14F100B - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
APT14F100B
Discrete Semiconductor Products - Transistors - FETs, MOSFETs APT14F100B
MOSFET N-CH 1000V 14A TO247

MOSFET N-CH 1000V 14A TO247

Supplier's Site

Technical Specifications

  DigiKey Richardson RFPD Win Source Electronics Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Transistors Metal-Oxide Semiconductor FET (MOSFET) RF Transistors
Product Number APT14F100B-ND APT14F100B 1324612-APT14F100B APT14F100B
Product Name Single FETs, MOSFETs Power FREDFET Transistor Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Polarity N-Channel N-Channel
Package Type TO-247; TO-247-3 TO-247; TO-247 TO-247; SOT3; TO-247-3 TO-247; TO-247-3
Transistor Type Power FREDFET Transistor
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