Microchip Technology, Inc. Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single APT14F100B

Manufacturer: Microchip Technology
Win Source Part Number: 1324612-APT14F100B
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Packaging: Tube
Standard Package: 1
Mounting: Through Hole
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 1000 V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
Rds On (Max) @ Id, Vgs: 980mOhm @ 7A, 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Power Dissipation (Max): 500W (Tc)
Supplier Device Package: TO-247 [B]
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3965 pF @ 25 V
Vgs (Max): ±30V
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Case / Package: TO-247-3
ECCN: EAR99
Fake Threat In the Open Market: 80
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Base Product Number: APT14F100
Drive Voltage (Max Rds On, Min Rds On): 10V
RoHS Status: RoHS Compliant

Power MOS 8™ is a high speed, high voltage N-channel switch-mode Power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly reduced ratio of Crss/Ciss result in excellent noise immunity and low switching loss. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control di/dt during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency.

N-Channel 1000V 14A (Tc) 500W (Tc) Through Hole TO-247 [B]