The APT1003RBFLL is an N-channel enhancement mode MOSFET in the Power MOS 7® series, designed for low-loss, high-voltage switching applications. It is housed in a D3PAK surface-mount package with a maximum drain-source voltage of 1000V and a continuous drain current of 4A at 25°C. The device has a typical on-state resistance of 3.00Ω at VGS = 10V and 2A, with a total gate charge of 34nC. It features a fast recovery body diode with a reverse recovery time of 250ns at 25°C and 515ns at 125°C. Maximum junction temperature is 150°C, and thermal resistance from junction to case is 0.90°C/W. The part meets AEC-Q200 and RoHS standards.
Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode Power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure.
| Richardson RFPD | |
|---|---|
| Product Category | Transistors |
| Product Number | APT1003RBFLLG |
| Product Name | Power FREDFET Transistor |
| Transistor Type | Power FREDFET Transistor |
