IGBT MOD 1200V 215A 625W ISOTOP Product overview: APT150GN120J from Microchip Technology is an IGBT Transistor for embedded electronics, industrial equipment, maintenance repair, OEM production, and component sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1200V, 215A, 625W. Search-friendly keywords include IGBT Transistor, IGBT Modules, electronic component, datasheet, replacement part, 1200V, 215A, 625W. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 297-APT150GN120J can be used for catalog matching and distributor lookup.
Manufacturer: Microchip Technology
Win Source Part Number: 1324942-APT150GN120J
Category: Discrete Semiconductor Products>Transistors
Packaging: Tube
Standard Package: 1
Mounting: Chassis Mount
Power - Max: 625 W
Configuration: Single
Input: Standard
IGBT Type: Trench Field Stop
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 215 A
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 150A
Current - Collector Cutoff (Max): 100 µA
Input Capacitance (Cies) @ Vce: 9.5 nF @ 25 V
NTC Thermistor: No
Supplier Device Package: ISOTOP®
Temperature Range - Operating: -55°C ~ 150°C (TJ)
Case / Package: ISOTOP
ECCN: EAR99
Fake Threat In the Open Market: 65
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: APT150GN120JMI-ND,AP
Base Product Number: APT150
RoHS Status: RoHS Compliant
Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low VCE(ON) and are ideal for low frequency applications that require absolute minimum conduction loss. Easy paralleling is a result of very tight parameter distribution and a slightly positive VCE(ON) temperature coefficient. A built-in gate resistor ensures extremely reliable operation, even in the event of a short circuit fault. Low gate charge simplifies gate drive design and minimizes losses.
IGBT Module Trench Field Stop Single 1200V 215A 625W Chassis Mount ISOTOP®
IGBT MOD 1200V 215A 625W ISOTOP
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | Richardson RFPD | DigiKey | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|
| Product Category | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Insulated Gate Bipolar Transistors (IGBT) | Transistors | Insulated Gate Bipolar Transistors (IGBT) |
| Product Number | 297-APT150GN120J | 1324942-APT150GN120J | APT150GN120J | APT150GN120J-ND | APT150GN120J |
| Product Name | 1200V 215A 625W IGBT Transistor | Discrete Semiconductor Products - Transistors - IGBTs - Modules | Power IGBT Transistor | IGBT Modules | Discrete Semiconductor Products - Transistors - IGBTs |
| PD | 625 milliwatts |