Microchip Technology, Inc. Power FREDFET Transistor APT17F100B

Description
Power MOS 8™ is a high speed, high voltage N-channel switch-mode Power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly reduced ratio of Crss/Ciss result in excellent noise immunity and low switching loss. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control di/dt during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency.
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Description
Power MOS 8™ is a high speed, high voltage N-channel switch-mode Power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly reduced ratio of Crss/Ciss result in excellent noise immunity and low switching loss. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control di/dt during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency.
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Suppliers

Company
Product
Description
Supplier Links
Power FREDFET Transistor - APT17F100B - Richardson RFPD
Downers Grove, IL, United States
Power FREDFET Transistor
APT17F100B
Power FREDFET Transistor APT17F100B
Power MOS 8™ is a high speed, high voltage N-channel switch-mode Power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly reduced ratio of Crss/Ciss result in excellent noise immunity and low switching loss. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control di/dt during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency.

Power MOS 8™ is a high speed, high voltage N-channel switch-mode Power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly reduced ratio of Crss/Ciss result in excellent noise immunity and low switching loss. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control di/dt during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency.

Supplier's Site
TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT17F100B - 911629-APT17F100B - Win Source Electronics
Laguna Hills, CA, United States
TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT17F100B
911629-APT17F100B
TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT17F100B 911629-APT17F100B
Manufacturer: Microchip Technology Win Source Part Number: 911629-APT17F100B Operating Temperature Range: -55°C ~ 150°C (TJ) Features: N-Channel 1000 V 17A (Tc) 625W (Tc) Through Hole TO-247 [B] Package: TO-247-3 Package: Tube Mounting: Through Hole Family Name: APT17F100 Categories: Discrete Semiconductor Products Case / Package: TO-247 [B] ECCN: EAR99 Popularity: High Fake Threat In the Open Market: 31 pct. Supply and Demand Status: Balance Quantity per package: 1 MSL Level: 1 (Unlimited) Estimated Pruduction Lead Time: 32 Weeks REACH Status: REACH Unaffected HTSUS: 8541.29.0095 Other Part Number: APT17F100BMI, APT17F100BMI-ND

Manufacturer: Microchip Technology
Win Source Part Number: 911629-APT17F100B
Operating Temperature Range: -55°C ~ 150°C (TJ)
Features: N-Channel 1000 V 17A (Tc) 625W (Tc) Through Hole TO-247 [B]
Package: TO-247-3
Package: Tube
Mounting: Through Hole
Family Name: APT17F100
Categories: Discrete Semiconductor Products
Case / Package: TO-247 [B]
ECCN: EAR99
Popularity: High
Fake Threat In the Open Market: 31 pct.
Supply and Demand Status: Balance
Quantity per package: 1
MSL Level: 1 (Unlimited)
Estimated Pruduction Lead Time: 32 Weeks
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Other Part Number: APT17F100BMI, APT17F100BMI-ND

Buy Now Datasheet
Singapore
1000V 17A MOSFET Transistor
278-APT17F100B
1000V 17A MOSFET Transistor 278-APT17F100B
MOSFET N-CH 1000V 17A TO247 Product overview: APT17F100B from Microchip Technology is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1000V, 17A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1000V, 17A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-APT17F100B can be used for catalog matching and distributor lookup.

MOSFET N-CH 1000V 17A TO247 Product overview: APT17F100B from Microchip Technology is a MOSFET Transistor for power switching, load control, motor drives, DC-DC converters, battery systems, and board-level power design. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include 1000V, 17A. Search-friendly keywords include MOSFET, power transistor, switching, N-channel, P-channel, 1000V, 17A, MOSFET Transistor, Single FETs, MOSFETs. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 278-APT17F100B can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Single FETs, MOSFETs - APT17F100B-ND - DigiKey
Thief River Falls, MN, United States
Single FETs, MOSFETs
APT17F100B-ND
Single FETs, MOSFETs APT17F100B-ND
N-Channel 1000V 17A (Tc) 625W (Tc) Through Hole TO-247 [B]

N-Channel 1000V 17A (Tc) 625W (Tc) Through Hole TO-247 [B]

Buy Now Datasheet
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - APT17F100B - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Transistors - FETs, MOSFETs
APT17F100B
Discrete Semiconductor Products - Transistors - FETs, MOSFETs APT17F100B
MOSFET N-CH 1000V 17A TO247

MOSFET N-CH 1000V 17A TO247

Supplier's Site

Technical Specifications

  Richardson RFPD Win Source Electronics ERSAELECTRONICS PTE. LTD. DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Transistors Metal-Oxide Semiconductor FET (MOSFET) Metal-Oxide Semiconductor FET (MOSFET) Transistors RF Transistors
Product Number APT17F100B 911629-APT17F100B 278-APT17F100B APT17F100B-ND APT17F100B
Product Name Power FREDFET Transistor TRANSISTORS - Transistors - FETs, MOSFETs - RF - APT17F100B 1000V 17A MOSFET Transistor Single FETs, MOSFETs Discrete Semiconductor Products - Transistors - FETs, MOSFETs
Transistor Type Power FREDFET Transistor
Package Type TO-247; TO-247 TO-247; SOT3; TO-247 [B] Tube TO-247; TO-247-3 TO-247; TO-247-3
Polarity N-Channel N-Channel N-Channel
TJ -55 to 150 C (-67 to 302 F) -55 to 150 C (-67 to 302 F)
MOSFET Operating Mode Enhancement
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