Microchip Technology, Inc. Power FREDFET Transistor APT20F50B

Description
Power MOS 8™ is a high speed, high voltage N-channel switch-mode Power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly reduced ratio of Crss/Ciss result in excellent noise immunity and low switching loss. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control di/dt during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency.
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Description
Power MOS 8™ is a high speed, high voltage N-channel switch-mode Power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly reduced ratio of Crss/Ciss result in excellent noise immunity and low switching loss. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control di/dt during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency.
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Datasheet
Datasheet Summary
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APT20F50B is a 500V, 20A N-channel FREDFET power MOSFET in a TO-247 package, designed for high-reliability switch-mode applications such as ZVS phase-shifted bridges, boost converters, and flyback circuits. It features a reverse recovery time of ≤200ns, low gate charge of 75nC, and reduced Crss/Ciss ratio for improved noise immunity and switching efficiency. The device has a maximum drain-source on-resistance of 0.30Ω at 10A and 10V gate drive, an avalanche energy rating of 405mJ, and operates from -55°C to 150°C junction temperature. It is RoHS compliant and rated for 290W power dissipation at 25°C case temperature with a thermal resistance of 0.43°C/W junction-to-case. Mounting torque is specified at 1.1N·m for the TO-247 package.

Datasheet Summary
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APT20F50B is a 500V, 20A N-channel FREDFET power MOSFET in a TO-247 package, designed for high-reliability switch-mode applications such as ZVS phase-shifted bridges, boost converters, and flyback circuits. It features a reverse recovery time of ≤200ns, low gate charge of 75nC, and reduced Crss/Ciss ratio for improved noise immunity and switching efficiency. The device has a maximum drain-source on-resistance of 0.30Ω at 10A and 10V gate drive, an avalanche energy rating of 405mJ, and operates from -55°C to 150°C junction temperature. It is RoHS compliant and rated for 290W power dissipation at 25°C case temperature with a thermal resistance of 0.43°C/W junction-to-case. Mounting torque is specified at 1.1N·m for the TO-247 package.

Suppliers

Company
Product
Description
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Power FREDFET Transistor - APT20F50B - Richardson RFPD
Downers Grove, IL, United States
Power FREDFET Transistor
APT20F50B
Power FREDFET Transistor APT20F50B
Power MOS 8™ is a high speed, high voltage N-channel switch-mode Power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly reduced ratio of Crss/Ciss result in excellent noise immunity and low switching loss. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control di/dt during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency.

Power MOS 8™ is a high speed, high voltage N-channel switch-mode Power MOSFET. This 'FREDFET' version has a drain-source (body) diode that has been optimized for high reliability in ZVS phase shifted bridge and other circuits through reduced trr, soft recovery, and high recovery dv/dt capability. Low gate charge, high gain, and a greatly reduced ratio of Crss/Ciss result in excellent noise immunity and low switching loss. The intrinsic gate resistance and capacitance of the poly-silicon gate structure help control di/dt during switching, resulting in low EMI and reliable paralleling, even when switching at very high frequency.

Supplier's Site Datasheet

Technical Specifications

  Richardson RFPD
Product Category Transistors
Product Number APT20F50B
Product Name Power FREDFET Transistor
Transistor Type Power FREDFET Transistor
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