Microchip Technology, Inc. Single Bipolar Transistors 2N2369A

NPN silicon switching transistor for switching applications, housed in a TO-18 (TO-206AA) package. Collector-emitter voltage rated at 15 Vdc, emitter-base voltage at 4.5 Vdc, and collector-base voltage at 40 Vdc. Total power dissipation is 1.2 W at 25°C with linear derating above 25°C. Thermal resistance junction-to-case is 146°C/W and junction-to-ambient is 325°C/W. Forward current transfer ratio ranges from 20 to 120 under specified bias conditions.collector-emitter saturation voltage is 0.20 V at 10 mA collector current and 1 mA base current. Turn-on time is 12 μs and turn-off time is 18 μs under specified switching conditions. Qualified per MIL-PRF-19500/317.