Microchip Technology, Inc. Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single APT1201R2BFLLG

Win Source Part Number: 1229595-APT1201R2BFLLG
Category: Discrete Semiconductor Products>Transistors - FETs, MOSFETs - Single
Series: POWER MOS 7®
Package: Tube
Standard Package: 1
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Drain to Source Voltage (Vdss): 1200 V
Current - Continuous Drain (Id) @ 25°C: 12A (Tc)
Rds On (Max) @ Id, Vgs: 1.25Ohm @ 6A, 10V
Vgs(th) (Max) @ Id: 5V @ 1mA
Mounting Type: Through Hole
Package / Case: TO-247-3
Supplier Device Package: TO-247 [B]
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2540 pF @ 25 V
ECCN: EAR99
Fake Threat In the Open Market: 63 pct.
MSL Level: 1 (Unlimited)
REACH Status: REACH Unaffected
HTSUS: 8541.29.0095
Mfr: Microchip Technology
Base Product Number: APT1201

Power MOS 7® is a new generation of low loss, high voltage, N-Channel enhancement mode Power MOSFETS. Both conduction and switching losses are addressed with Power MOS 7® by significantly lowering RDS(ON) and Qg. Power MOS 7® combines lower conduction and switching losses along with exceptionally fast switching speeds inherent with APT's patented metal gate structure.

N-Channel 1200V 12A (Tc) Through Hole TO-247 [B]