MACOM RF Diodes MA4E1317

Description
RF DIODE SCHOTTKY 7V
Request a Quote Datasheet
Description
RF DIODE SCHOTTKY 7V
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
RF Diodes - MA4E1317 - ODG (Origin Data Global)
Shenzhen, China
RF Diodes
MA4E1317
RF Diodes MA4E1317
RF DIODE SCHOTTKY 7V

RF DIODE SCHOTTKY 7V

Supplier's Site Datasheet
Schottky 7V Diode and Rectifier - 284-MA4E1317 - ERSAELECTRONICS PTE. LTD.
Singapore
Schottky 7V Diode and Rectifier
284-MA4E1317
Schottky 7V Diode and Rectifier 284-MA4E1317
RF DIODE SCHOTTKY 7V Product overview: MA4E1317 from MACOM Technology Solutions is a Diode and Rectifier for rectification, reverse-polarity protection, signal routing, surge suppression, and electronic circuit reliability. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Schottky, 7V. Search-friendly keywords include diode, rectifier, Schottky, switching diode, 7V, Diode and Rectifier, RF Diodes. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 284-MA4E1317 can be used for catalog matching and distributor lookup.

RF DIODE SCHOTTKY 7V Product overview: MA4E1317 from MACOM Technology Solutions is a Diode and Rectifier for rectification, reverse-polarity protection, signal routing, surge suppression, and electronic circuit reliability. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include Schottky, 7V. Search-friendly keywords include diode, rectifier, Schottky, switching diode, 7V, Diode and Rectifier, RF Diodes. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 284-MA4E1317 can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
RF Schottky Diode - MA4E1317 - Richardson RFPD
Downers Grove, IL, United States
RF Schottky Diode
MA4E1317
RF Schottky Diode MA4E1317
Single Diode Configuration: MACOM's MA4E1317 single, MA4E1318 anti-parallel pair, MA4E1319-1 reverse tee, MA4E1319-2 series tee and MA4E2160 unconnected anti-parallel pair are gallium arsenide flip chip Schottky barrier diodes. These devices are fabricated on OMCVD epitaxial wafers using a process designed for high device uniformity and extremely low parasitics. The diodes are fully passivated with silicon nitride and have an additional layer of polyimide for scratch protection. The protective coatings prevent damage to the junction during automated or manual handling. The flip chip configuration is suitable for pick and place insertion. The high cutoff frequency of these diodes allows use through millimeter wave frequencies. Typical applications includes single and double balanced mixers in PCN transceivers and radios, police radar detectors, and automotive radar detectors. The devices can be used through 80 GHz. The MA4E1318 anti-parallel pair is designed for use in sub harmonically pumped mixers. Close matching of the diode characteristics results in high LO suppression at the RF input.

Single Diode Configuration: MACOM's MA4E1317 single, MA4E1318 anti-parallel pair, MA4E1319-1 reverse tee, MA4E1319-2 series tee and MA4E2160 unconnected anti-parallel pair are gallium arsenide flip chip Schottky barrier diodes. These devices are fabricated on OMCVD epitaxial wafers using a process designed for high device uniformity and extremely low parasitics. The diodes are fully passivated with silicon nitride and have an additional layer of polyimide for scratch protection. The protective coatings prevent damage to the junction during automated or manual handling. The flip chip configuration is suitable for pick and place insertion. The high cutoff frequency of these diodes allows use through millimeter wave frequencies. Typical applications includes single and double balanced mixers in PCN transceivers and radios, police radar detectors, and automotive radar detectors. The devices can be used through 80 GHz. The MA4E1318 anti-parallel pair is designed for use in sub harmonically pumped mixers. Close matching of the diode characteristics results in high LO suppression at the RF input.

Supplier's Site Datasheet
RF Diodes - 1465-1024-ND - DigiKey
Thief River Falls, MN, United States
RF Diodes
1465-1024-ND
RF Diodes 1465-1024-ND
RF Diode Schottky - Single 7V

RF Diode Schottky - Single 7V

Buy Now Datasheet
Sheung Wan, Hong Kong
Schottky Diodes & Rectifiers
MA4E1317
Schottky Diodes & Rectifiers MA4E1317
Schottky Diodes & Rectifiers

Schottky Diodes & Rectifiers

Buy Now Datasheet
Discrete Semiconductor Products - Diodes - RF Diodes - MA4E1317 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Diodes - RF Diodes
MA4E1317
Discrete Semiconductor Products - Diodes - RF Diodes MA4E1317
RF DIODE SCHOTTKY 7V

RF DIODE SCHOTTKY 7V

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) ERSAELECTRONICS PTE. LTD. Richardson RFPD DigiKey VAST STOCK CO., LIMITED Shenzhen Shengyu Electronics Technology Limited
Product Category RF Diodes Rectifiers RF Diodes RF Diodes Schottky Diodes RF Diodes
Product Number MA4E1317 284-MA4E1317 MA4E1317 1465-1024-ND MA4E1317 MA4E1317
Product Name RF Diodes Schottky 7V Diode and Rectifier RF Schottky Diode RF Diodes Schottky Diodes & Rectifiers Discrete Semiconductor Products - Diodes - RF Diodes
Diode Type Schottky Schottky Schottky
Package 2-SMD Bulk ODS-1278 2-SMD Die in Carrier
CT 0.0600 pF 0.0450 pF 0.0600 pF
Tj -65 to 125 C (-85 to 257 F) -65 to 125 C (-85 to 257 F) -65 to 125 C (-85 to 257 F) -65 to 125 C (-85 to 257 F)
RoHS Compliant RoHS
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