MACOM RF Diodes - MA4E1318 MA4E1318

Description
Manufacturer: M/A-Com Technology Solutions Win Source Part Number: 1065549-MA4E1318 Packaging: Bulk Diode Type: Schottky - Anti-Parallel Capacitance @ Vr, F: 0.06pF @ 0V, 1MHz Voltage - Peak Reverse (Max): 7V Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -65°C to 125°C (TJ) Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Balance
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Description
Manufacturer: M/A-Com Technology Solutions Win Source Part Number: 1065549-MA4E1318 Packaging: Bulk Diode Type: Schottky - Anti-Parallel Capacitance @ Vr, F: 0.06pF @ 0V, 1MHz Voltage - Peak Reverse (Max): 7V Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -65°C to 125°C (TJ) Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Balance
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
RF Diodes - MA4E1318 - 1065549-MA4E1318 - Win Source Electronics
Laguna Hills, CA, United States
RF Diodes - MA4E1318
1065549-MA4E1318
RF Diodes - MA4E1318 1065549-MA4E1318
Manufacturer: M/A-Com Technology Solutions Win Source Part Number: 1065549-MA4E1318 Packaging: Bulk Diode Type: Schottky - Anti-Parallel Capacitance @ Vr, F: 0.06pF @ 0V, 1MHz Voltage - Peak Reverse (Max): 7V Categories: Discrete Semiconductor Products Status: Active Temperature Range - Operating: -65°C to 125°C (TJ) Popularity: Medium Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Balance

Manufacturer: M/A-Com Technology Solutions
Win Source Part Number: 1065549-MA4E1318
Packaging: Bulk
Diode Type: Schottky - Anti-Parallel
Capacitance @ Vr, F: 0.06pF @ 0V, 1MHz
Voltage - Peak Reverse (Max): 7V
Categories: Discrete Semiconductor Products
Status: Active
Temperature Range - Operating: -65°C to 125°C (TJ)
Popularity: Medium
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Balance

Buy Now Datasheet
RF Diodes - MA4E1318 - ODG (Origin Data Global)
Shenzhen, China
RF Diodes
MA4E1318
RF Diodes MA4E1318
RF DIODE SCHOTTKY 7V

RF DIODE SCHOTTKY 7V

Supplier's Site Datasheet
RF Diodes - 1465-1025-ND - DigiKey
Thief River Falls, MN, United States
RF Diodes
1465-1025-ND
RF Diodes 1465-1025-ND
RF Diode Schottky - Anti-Parallel 7V

RF Diode Schottky - Anti-Parallel 7V

Buy Now Datasheet
RF Schottky Diode - MA4E1318 - Richardson RFPD
Downers Grove, IL, United States
RF Schottky Diode
MA4E1318
RF Schottky Diode MA4E1318
Dual Diode - Connected (Anti-Parallel) Configuration: MACOM's MA4E1317 single, MA4E1318 anti-parallel pair, MA4E1319-1 reverse tee, MA4E1319-2 series tee and MA4E2160 unconnected anti-parallel pair are gallium arsenide flip chip Schottky barrier diodes. These devices are fabricated on OMCVD epitaxial wafers using a process designed for high device uniformity and extremely low parasitics. The diodes are fully passivated with silicon nitride and have an additional layer of polyimide for scratch protection. The protective coatings prevent damage to the junction during automated or manual handling. The flip chip configuration is suitable for pick and place insertion. The high cutoff frequency of these diodes allows use through millimeter wave frequencies. Typical applications includes single and double balanced mixers in PCN transceivers and radios, police radar detectors, and automotive radar detectors. The devices can be used through 80 GHz. The MA4E1318 anti-parallel pair is designed for use in sub harmonically pumped mixers. Close matching of the diode characteristics results in high LO suppression at the RF input.

Dual Diode - Connected (Anti-Parallel) Configuration: MACOM's MA4E1317 single, MA4E1318 anti-parallel pair, MA4E1319-1 reverse tee, MA4E1319-2 series tee and MA4E2160 unconnected anti-parallel pair are gallium arsenide flip chip Schottky barrier diodes. These devices are fabricated on OMCVD epitaxial wafers using a process designed for high device uniformity and extremely low parasitics. The diodes are fully passivated with silicon nitride and have an additional layer of polyimide for scratch protection. The protective coatings prevent damage to the junction during automated or manual handling. The flip chip configuration is suitable for pick and place insertion. The high cutoff frequency of these diodes allows use through millimeter wave frequencies. Typical applications includes single and double balanced mixers in PCN transceivers and radios, police radar detectors, and automotive radar detectors. The devices can be used through 80 GHz. The MA4E1318 anti-parallel pair is designed for use in sub harmonically pumped mixers. Close matching of the diode characteristics results in high LO suppression at the RF input.

Supplier's Site Datasheet
Discrete Semiconductor Products - Diodes - RF Diodes - MA4E1318 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Diodes - RF Diodes
MA4E1318
Discrete Semiconductor Products - Diodes - RF Diodes MA4E1318
RF DIODE SCHOTTKY 7V

RF DIODE SCHOTTKY 7V

Supplier's Site
Sheung Wan, Hong Kong
Schottky Diodes & Rectifiers
MA4E1318
Schottky Diodes & Rectifiers MA4E1318
Schottky Diodes & Rectifiers DC-80GHz Cap .09pF Junc. Cap .09pF

Schottky Diodes & Rectifiers DC-80GHz Cap .09pF Junc. Cap .09pF

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Technical Specifications

  Win Source Electronics ODG (Origin Data Global) DigiKey Richardson RFPD Shenzhen Shengyu Electronics Technology Limited VAST STOCK CO., LIMITED
Product Category RF Diodes RF Diodes RF Diodes RF Diodes RF Diodes Schottky Diodes
Product Number 1065549-MA4E1318 MA4E1318 1465-1025-ND MA4E1318 MA4E1318 MA4E1318
Product Name RF Diodes - MA4E1318 RF Diodes RF Diodes RF Schottky Diode Discrete Semiconductor Products - Diodes - RF Diodes Schottky Diodes & Rectifiers
Diode Type Schottky; Schottky - Anti-Parallel Schottky Schottky Schottky
Life Cycle Stage Active Active
CT 0.0600 pF 0.0600 pF 0.0600 pF 0.0450 pF
Tj -65 to 125 C (-85 to 257 F) -65 to 125 C (-85 to 257 F) -65 to 125 C (-85 to 257 F) -65 to 125 C (-85 to 257 F)
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