Wolfspeed Schottky Diodes & Rectifiers E4D20120G

Wolfspeed E4D20120G

Wolfspeed E4D20120G

Wolfspeed E4D20120G

Features

• 4th Generation SiC Merged PIN Schottky Technology
• Zero Reverse Recovery Current
• High-Frequency Operation
• Temperature-Independent Switching Behavior
• AEC-Q101 Qualified and PPAP Capable
• Humidity Resistant

Benefits

• Replace Bipolar with Unipolar Rectifiers
• Essentially No Switching Losses
• Higher Efficiency
• Reduction of Heat Sink Requirements
• Parallel Devices Without Thermal Runaway
• Ideal for Outdoor Environments

Applications

• Boost Diodes in PFC or DC/DC stages
• Free Wheeling Diodes in Inverter stages
• AC/DC converters
• Automotive and Traction Power Conversion
• PV Inverters

Diode Silicon Carbide Schottky 1200V 56A (DC) Surface Mount TO-263-2

Win Source Part Number: 1056673-E4D20120G
Category: Discrete Semiconductor Products>Diodes - Rectifiers - Single
Series: E-Series, Automotive
Speed: No Recovery Time > 500mA (Io)
Package: Tube
Standard Package: 50
Mounting: SMD (SMT)
Diode Type: Silicon Carbide Schottky
Voltage - DC Reverse (Vr) (Max): 1200 V
Current - Average Rectified (Io): 56A (DC)
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 20 A
Reverse Recovery Time (trr): 0 ns
Current - Reverse Leakage @ Vr: 200 µA @ 200 µA
Capacitance @ Vr, F: 1474pF @ 0V, 1MHz
Operating Temperature - Junction: -55°C ~ 175°C
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Supplier Device Package: TO-263-2
ECCN: EAR99
Fake Threat In the Open Market: 57 pct.
MSL Level: 1 (Unlimited)
HTSUS: 8541.10.0080
Mfr: Wolfspeed, Inc.
Other Names: 1697-E4D20120G
Base Product Number: E4D20120