Microchip Technology, Inc. RF PIN Diode GC4602-172

Description
The high power PIN diode series is available in surface mount stud and insulated stud packages. These PIN diode chips utilize high resistivity material and an intrinsic float zone process technology thus ensuring low loss and low distortion characteristics through HF band. Due to a thick base width of the ”I” layer, these diodes have very high reverse voltage characteristics with very low thermal impedance. These PIN chips are passivated with a proprietary high voltage glassivation process yielding low leakage stable devices.
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Description
The high power PIN diode series is available in surface mount stud and insulated stud packages. These PIN diode chips utilize high resistivity material and an intrinsic float zone process technology thus ensuring low loss and low distortion characteristics through HF band. Due to a thick base width of the ”I” layer, these diodes have very high reverse voltage characteristics with very low thermal impedance. These PIN chips are passivated with a proprietary high voltage glassivation process yielding low leakage stable devices.
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Suppliers

Company
Product
Description
Supplier Links
RF PIN Diode - GC4602-172 - Richardson RFPD
Downers Grove, IL, United States
RF PIN Diode
GC4602-172
RF PIN Diode GC4602-172
The high power PIN diode series is available in surface mount stud and insulated stud packages. These PIN diode chips utilize high resistivity material and an intrinsic float zone process technology thus ensuring low loss and low distortion characteristics through HF band. Due to a thick base width of the ”I” layer, these diodes have very high reverse voltage characteristics with very low thermal impedance. These PIN chips are passivated with a proprietary high voltage glassivation process yielding low leakage stable devices.

The high power PIN diode series is available in surface mount stud and insulated stud packages. These PIN diode chips utilize high resistivity material and an intrinsic float zone process technology thus ensuring low loss and low distortion characteristics through HF band. Due to a thick base width of the ”I” layer, these diodes have very high reverse voltage characteristics with very low thermal impedance. These PIN chips are passivated with a proprietary high voltage glassivation process yielding low leakage stable devices.

Supplier's Site
Discrete Semiconductor Products - Diodes - RF Diodes - GC4602-172 - Acme Chip Technology Co., Limited
Shenzhen, China
Discrete Semiconductor Products - Diodes - RF Diodes
GC4602-172
Discrete Semiconductor Products - Diodes - RF Diodes GC4602-172
SI PIN HERMETIC STUD

SI PIN HERMETIC STUD

Supplier's Site

Technical Specifications

  Richardson RFPD Acme Chip Technology Co., Limited
Product Category RF Diodes RF Diodes
Product Number GC4602-172 GC4602-172
Product Name RF PIN Diode Discrete Semiconductor Products - Diodes - RF Diodes
Configuration Single
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