MACOM RF Diodes MA47418-134

Description
DIODE,PIN,CHIP,OXIDE
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Description
DIODE,PIN,CHIP,OXIDE
Request a Quote Datasheet

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RF Diodes MA47418-134
DIODE,PIN,CHIP,OXIDE

DIODE,PIN,CHIP,OXIDE

Supplier's Site
RF PIN Diode - MA47418-134 - Richardson RFPD
Downers Grove, IL, United States
RF PIN Diode
MA47418-134
RF PIN Diode MA47418-134
Single Diode Configuration: MACOM offers a comprehensive line of low capacitance, planar and mesa, silicon PIN diode chips which use ceramic glass and silicon nitride passivation technology. The Silicon PIN series of devices cover a broad spectrum of performance requirements for control circuit applications. They are available in several choices of I-region lengths and have been optimally designed to minimize parametric trade offs when considering low capacitance, low series resistance, and high breakdown voltages. Their small size and low parasitics, make them an ideal choice for broadband, high frequency, micro-strip hybrid assemblies. The attenuator line of PIN diode chips are a planar or mesa construction and because of their thicker I-regions and predictable Rs vs. I characteristics, they are well suited for low distortion attenuator and switch circuits. Incorporated in the chip's construction is MACOM's, time proven, hard glass, CERMACHIP®. The hard glass passivation completely encapsulates the entire PIN junction area resulting in a hermetically sealed chip which has been qualified in many military applications. These CERMACHIP® diodes are available in a wide variety of voltage ratings, up to 3,000 volts and are capable of controlling kilowatts of power.

Single Diode Configuration: MACOM offers a comprehensive line of low capacitance, planar and mesa, silicon PIN diode chips which use ceramic glass and silicon nitride passivation technology. The Silicon PIN series of devices cover a broad spectrum of performance requirements for control circuit applications. They are available in several choices of I-region lengths and have been optimally designed to minimize parametric trade offs when considering low capacitance, low series resistance, and high breakdown voltages. Their small size and low parasitics, make them an ideal choice for broadband, high frequency, micro-strip hybrid assemblies. The attenuator line of PIN diode chips are a planar or mesa construction and because of their thicker I-regions and predictable Rs vs. I characteristics, they are well suited for low distortion attenuator and switch circuits. Incorporated in the chip's construction is MACOM's, time proven, hard glass, CERMACHIP®. The hard glass passivation completely encapsulates the entire PIN junction area resulting in a hermetically sealed chip which has been qualified in many military applications. These CERMACHIP® diodes are available in a wide variety of voltage ratings, up to 3,000 volts and are capable of controlling kilowatts of power.

Supplier's Site Datasheet
Discrete Semiconductor Products - Diodes - RF Diodes - MA47418-134 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Diodes - RF Diodes
MA47418-134
Discrete Semiconductor Products - Diodes - RF Diodes MA47418-134
DIODE,PIN,CHIP,OXIDE

DIODE,PIN,CHIP,OXIDE

Supplier's Site

Technical Specifications

  ODG (Origin Data Global) Richardson RFPD Shenzhen Shengyu Electronics Technology Limited
Product Category PIN Diodes RF Diodes RF Diodes
Product Number MA47418-134 MA47418-134 MA47418-134
Product Name RF Diodes RF PIN Diode Discrete Semiconductor Products - Diodes - RF Diodes
Package Die ODS-134 Chip
Tj 175 C (347 F) 175 C (347 F)
Configuration Single
Diode Type PIN
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