Wolfspeed Silicon Carbide Diode E4D20120D

Description
Features 4th Generation SiC Merged PIN Schottky Technology Zero Reverse Recovery Current High-Frequency Operation Temperature-Independ ent Switching Behavior AEC-Q101 Qualified and PPAP Capable Humidity Resistant Benefits Replace Bipolar with Unipolar Rectifiers Essentially No Switching Losses Higher Efficiency Reduction of Heat Sink Requirements Parallel Devices Without Thermal Runaway Ideal for Outdoor Environments Applications Boost Diodes in PFC or DC/DC stages Free Wheeling Diodes in Inverter stages AC/DC converters Automotive and Traction Power Conversion PV Inverters
  • Silicon Carbide Diode - E4D20120D - Richardson RFPD
    Richardson RFPD
  • Diode Arrays - 1697-E4D20120D-ND - DigiKey
    DigiKey
  • Discrete Semiconductor Products - Diodes - Rectifiers - E4D20120D - Shenzhen Shengyu Electronics Technology Limited
    Shenzhen Shengyu Electronics Technology Limited
Request a Quote Datasheet
Description
Features 4th Generation SiC Merged PIN Schottky Technology Zero Reverse Recovery Current High-Frequency Operation Temperature-Independ ent Switching Behavior AEC-Q101 Qualified and PPAP Capable Humidity Resistant Benefits Replace Bipolar with Unipolar Rectifiers Essentially No Switching Losses Higher Efficiency Reduction of Heat Sink Requirements Parallel Devices Without Thermal Runaway Ideal for Outdoor Environments Applications Boost Diodes in PFC or DC/DC stages Free Wheeling Diodes in Inverter stages AC/DC converters Automotive and Traction Power Conversion PV Inverters
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Silicon Carbide Diode - E4D20120D - Richardson RFPD
Richardson RFPD
Downers Grove, IL, United States
Silicon Carbide Diode
E4D20120D
Silicon Carbide Diode E4D20120D
Features 4th Generation SiC Merged PIN Schottky Technology Zero Reverse Recovery Current High-Frequency Operation Temperature-Independ ent Switching Behavior AEC-Q101 Qualified and PPAP Capable Humidity Resistant Benefits Replace Bipolar with Unipolar Rectifiers Essentially No Switching Losses Higher Efficiency Reduction of Heat Sink Requirements Parallel Devices Without Thermal Runaway Ideal for Outdoor Environments Applications Boost Diodes in PFC or DC/DC stages Free Wheeling Diodes in Inverter stages AC/DC converters Automotive and Traction Power Conversion PV Inverters

Features

  • 4th Generation SiC Merged PIN Schottky Technology
  • Zero Reverse Recovery Current
  • High-Frequency Operation
  • Temperature-Independent Switching Behavior
  • AEC-Q101 Qualified and PPAP Capable
  • Humidity Resistant

Benefits

  • Replace Bipolar with Unipolar Rectifiers
  • Essentially No Switching Losses
  • Higher Efficiency
  • Reduction of Heat Sink Requirements
  • Parallel Devices Without Thermal Runaway
  • Ideal for Outdoor Environments

Applications

  • Boost Diodes in PFC or DC/DC stages
  • Free Wheeling Diodes in Inverter stages
  • AC/DC converters
  • Automotive and Traction Power Conversion
  • PV Inverters
Supplier's Site Datasheet
Diode Arrays - 1697-E4D20120D-ND - DigiKey
DigiKey
Thief River Falls, MN, United States
Diode Arrays
1697-E4D20120D-ND
Diode Arrays 1697-E4D20120D-ND
Diode Silicon Carbide Schottky 1200V 33A (DC) Through Hole TO-247-3

Diode Silicon Carbide Schottky 1200V 33A (DC) Through Hole TO-247-3

Buy Now Datasheet
Discrete Semiconductor Products - Diodes - Rectifiers - E4D20120D - Shenzhen Shengyu Electronics Technology Limited
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Discrete Semiconductor Products - Diodes - Rectifiers
E4D20120D
Discrete Semiconductor Products - Diodes - Rectifiers E4D20120D
DIODE SIL CARB 1.2KV 33A TO247-3

DIODE SIL CARB 1.2KV 33A TO247-3

Supplier's Site

Technical Specifications

  Richardson RFPD DigiKey Shenzhen Shengyu Electronics Technology Limited
Product Category Diodes Diode Arrays Rectifiers
Product Number E4D20120D 1697-E4D20120D-ND E4D20120D
Product Name Silicon Carbide Diode Diode Arrays Discrete Semiconductor Products - Diodes - Rectifiers
Diode Type Silicon Carbide Diode
IF 20000 mA
Arrangement Common Anode
Tj -55 to 175 C (-67 to 347 F)
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